摘要:

Measurements on the photo-induced discharge effects of ZnO semiconductor powder-resin binder layers show clearly their applicability as photoreceptors in low-volume xerographic machines. From the optical transmission characteristics, it can be confirmed that light is effectively guided down the binder layer as a result of multiple reflections at the semiconductor surface. An impurity or defect centre located at 1.61 eV below the conduction band of ZnO is found from the photoconductivity action spectrum and confirmed by cathodeluminescence data. The transit time results on these ZnO layers, obtained from xerographic time-of-flight measurements, lend support to the belief that the electron traps in these materials are essentially shallow in depth but likely to be present in large numbers.

DOI:10.1049/ip-i-1.1986.0043

出版商:IEE    

年代:1986

数据来源: IET

摘要:

A new enhancement MOS transistor model applicable in all operating regimes is presented in the paper. Usually, MOS transistor models are based on a global equivalent circuit. The global capacitor value determination must take into account the charge sharing, and charges must be controlled, i.e.Qs+ QD+ QB+ QG= 0In this model, the distributed charge model (DCM), charges are distributed along the channel and naturally controlled. The threshold voltage notion disappears, perfecting the continuity between ‘subthreshold’ and strong inversion. The surface potential profile is determined along the channel in the gradual channel conditions using an expression such asΨs= Ψs0+ ηVwhere η is calculated accurately. The approach used takes into account the 2-dimensional physical behaviour. An analysis of the gate controlled depletion region and the effective channel length determination make possible the use of the model in submicron structures. The new model may have applications in electrical simulation for integrated circuit computer aided design, and in the determination of physical parameters along the MOS transistor channel. No fitting parameter, very often introduced in analytical approaches, is necessary here and the control of charges is obtained.

DOI:10.1049/ip-i-1.1986.0044

出版商:IEE    

年代:1986

数据来源: IET

摘要:

A multilump linear model giving good agreement between measured and simulated 2-port parameters in the frequency range 0.5–6 GHz and collector currents up to 20 mA is given. The collector current dependence of intrinsic elements of the model is determined.

DOI:10.1049/ip-i-1.1986.0045

出版商:IEE    

年代:1986

数据来源: IET

摘要:

The weighted residual formulation of the finite-element method is used to solve the nonlinear diffusion equation which describes dopant diffusion. Discretisation in the time domain is carried out using the Crank-Nicolson implicit scheme. A remeshing scheme based on a continuity criterion obtained by comparing the concentration values of adjacent nodes is used to introduce or eliminate nodes in the spatial domain as the diffusion proceeds in time. This scheme which uses an average diffusivity across each element has been successfully applied to the simulation of As diffusion in Si, and overcomes the oscillation and instability which would otherwise occur if a uniform mesh with the same number of nodes were used.

DOI:10.1049/ip-i-1.1986.0046

出版商:IEE    

年代:1986

数据来源: IET