摘要:

The electrical properties of a series of Au/Langmuir-Blodgett film/n-GaP metal-insulatorsemiconductor diodes are reported. The fabrication of diodes incorporating varying numbers of monolayers on the same GaP substrate has enabled a direct comparison of device properties with insulator thickness to be made. The devices have been operated both as photovoltaic solar cells and as electroluminescent diodes. The Langmuir-Blodgett film thickness required to optimise the electroluminescence efficiency is found to be 21 nm. This corresponds to the insulator thickness at which the short-circuit photocurrent of the solar cell begins to decrease. Results are discussed in terms of a simple energy band diagram for the metal-insulator-semiconductor structure.

DOI:10.1049/ip-i-1.1985.0027

出版商:IEE    

年代:1985

数据来源: IET

摘要:

A simple optimisation procedure for the design of travelling-wave amplifiers with two parallel gatelines and a common drain line is presented which utilises the full impedance matching potential involved. The parameters to be optimised for best broad-band performance of the amplifier are the characteristic impedances and, simultaneously, the line section lengths. The predicted performance of a design parallel distributed amplifier, employing eight typical 0.7 μm × 300 μm FETs, i.e. four for each of the two parallel gate-lines, shows 8.8 ± 0.5 dB gain over the frequency range 2–16.5 GHz.

DOI:10.1049/ip-i-1.1985.0028

出版商:IEE    

年代:1985

数据来源: IET

摘要:

Thin-film fuses consisting of single layers of silver have been deposited on silica and alumina substrates. Results of temperature measurements are presented for the case where the fuse current is significantly below the level necessary for metal vaporisation and arc formation.

DOI:10.1049/ip-i-1.1985.0029

出版商:IEE    

年代:1985

数据来源: IET

摘要:

A bumpless monotonic bicubic interpolation (MBI) technique is proposed. The method is applied to MOSFET device modelling for guessing at a very smooth interpolated curved surface. Monotonic increase in a two-dimensional surface can be held, even if the actual device characteristics show steepest change, like punchthrough characteristics. The technique can be utilised for very small number micron and/or submicron VLSI MOSFET device modelling.

DOI:10.1049/ip-i-1.1985.0030

出版商:IEE    

年代:1985

数据来源: IET

摘要:

Langmuir-Blodgett multilayer films of porphyrins have been produced and in-plane conductivity measurements performed on the samples when exposed to the toxic gases NO2, CO and H2S. A number of porphyrins showed a large and rapid increase in conductivity when exposed to NO2. The response of the samples varied with film thickness, the partial pressure of the gas, the central metal ion of the porphyrin and also with the peripheral substituents on the porphyrin ring.

DOI:10.1049/ip-i-1.1985.0031

出版商:IEE    

年代:1985

数据来源: IET

摘要:

An accurate method of determining the maximum power point (Vm,Im) of an energy conversion device like a solar cell, based on simple geometrical considerations, is given. Two additional checks on the correctness of the point are also possible by the method. The procedure holds irrespective of the values of parameters like the diode ideality factor (A), the series resistance (Rs) and the shunt resistance (Rsh), and enables an accurate evaluation of the fill factor (FF). The reliability of the method is established using theVagainstIcurves for an Si homojunction, a Cu2S/CdS heterojunction and Al/Si, MIS Schottky barrier cells. It is shown that possibilities exist of quite accurate, consistent and comprehensive measurement of the light generated currentIL,AandRsif the effect ofRshis negligible, and the reverse saturation currentIodetermined from the characteristics without illumination. Typical examples of the application of the method are given. It is found that the value ofRs, determined by the method, is always larger than that obtained from the slope of theVagainstIcurve near theV-axis. This is shown to be expected on physical grounds. However, on the same basis, it is found that the value ofRsh, as obtained from the slope of the reverse characteristic under illumination, should not differ much from the value at the operating point, i.e. (Vm,Im)

DOI:10.1049/ip-i-1.1985.0032

出版商:IEE    

年代:1985

数据来源: IET

摘要:

NMOS transistors using high-energy source/drain implantation have been found to have negative threshold shifts. These shifts are shown to be due to arsenic penetration of the polysilicon gate. An implant model of the three-layer structure has been used to predict the threshold shift, and good agreement is found with experimental results.

DOI:10.1049/ip-i-1.1985.0033

出版商:IEE    

年代:1985

数据来源: IET

摘要:

The photovoltaic properties of GaAs MESFET layers are studied by varying illumination wavelength and temperature for two different electrode geometry devices. The active layer-substrate photoresponse is determined by the substrate deep traps. A significant contribution to the Dember effect is observed when the device electrode path is extended over the substrate. The photovoltage response to amplitude modulated illumination is limited by trapping effects within the substrate

DOI:10.1049/ip-i-1.1985.0034

出版商:IEE    

年代:1985

数据来源: IET