IEE Proceedings I (Solid-State and Electron Devices)


ISSN: null        年代:1981
当前卷期:Volume 128  issue 2     [ 查看所有卷期 ]

年代:1981
 
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1. Temperature dependence of threshold current in (GaIn)(AsP) DH lasers at 1.3 and 1.5 μm wavelength
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  2,   1981,   Page  37-43

G.H.BThompson,  

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2. Measurement of interface state characteristics of MOS transistor utilising charge-pumping techniques
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  2,   1981,   Page  44-52

W.V.Backensto,   C.R.Viswanathan,  

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3. Switching properties of inversion-controlled metal-thin insulator -Si(n)-Si(p+) devices
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  2,   1981,   Page  53-57

G.Sarrabayrouse,   J.Buxo,   J.-P.Sebaa,   A.Essaid,  

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4. Modelling the optical mis thyristor
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  2,   1981,   Page  58-60

S.E.-D.Habib,   A.A.Eltoukhy,  

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5. Measurements of dipole domains in indium phosphide using a new point-contact probe
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  2,   1981,   Page  61-67

D.K.Hamilton,  

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6. Proton-induced X-ray emission studies of generation impurities in silicon
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  2,   1981,   Page  68-72

B.Golja,   A.G.Nassibian,   D.Cohen,  

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