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1. |
Experimental observation of switching in MISM and MISIM devices |
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IEE Proceedings I (Solid-State and Electron Devices),
Volume 128,
Issue 5,
1981,
Page 161-164
M.Darwish,
K.Board,
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摘要:
Predictions have been made for two-state switching in metal-thin insulator-semiconductor-metal (MISIM) structures. In the paper experimental verification of such switching is provided in a V-groove and a surface geometry device. Bidirectional switching is shown for the MISIM device and three-terminal operation is demonstrated.
DOI:10.1049/ip-i-1.1981.0040
出版商:IEE
年代:1981
数据来源: IET
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2. |
Theory of switching in MISIM structures |
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IEE Proceedings I (Solid-State and Electron Devices),
Volume 128,
Issue 5,
1981,
Page 165-173
M.Darwish,
K.Board,
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PDF (894KB)
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摘要:
A detailed analysis of the DC switching characteristics of metal-thin insulator-semiconductor-thin insulator-metal (MISIM) devices is presented. In contrast with conventional junction and MISM devices, they are shown to exhibit bidirectional switching. In addition, the minority-carrier concentrations are very small, and so the turn-off times should be shorter. Two distinct cases are distinguished, one where the second insulator is relatively thin and where it is well represented by a Schottky barrier with an interfacial layer, and the other where the second oxide is relatively thick and where it is treated as a second MIS diode.
DOI:10.1049/ip-i-1.1981.0042
出版商:IEE
年代:1981
数据来源: IET
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3. |
Optical transient switching measurements on metal-insulator (tunnel)-silicon thyristor at 0.85 μm wavelength |
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IEE Proceedings I (Solid-State and Electron Devices),
Volume 128,
Issue 5,
1981,
Page 174-179
R.B.Calligaro,
S.Moustakas,
J.Dell,
A.G.Nassibian,
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PDF (884KB)
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摘要:
Optical transient switching measurements of the metal-insulator (tunnel)-silicon thyristor (MIST) are presented. A pulsed GaAlAs laser operating at 0.85 μm wavelength was employed to obtain the turn-on delay time and the rise and fall times of the MIST as a function of optical power level, bias and pulse width. The turn-off delay time was also measured under the same conditions, and the results are explained qualitatively. Furthermore, the response of the device under minimum threshold conditions is established, and the facility of the measured data in predicting the performance of the MIST as a monostable optical detector is examined. Finally, areas for further improvement are outlined.
DOI:10.1049/ip-i-1.1981.0043
出版商:IEE
年代:1981
数据来源: IET
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4. |
Large-signal circuit model for simulation of injection-laser modulation dynamics |
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IEE Proceedings I (Solid-State and Electron Devices),
Volume 128,
Issue 5,
1981,
Page 180-184
RodneyS.Tucker,
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PDF (602KB)
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摘要:
A new large-signal circuit model of a heterojunction injection laser is presented. The model includes the current/voltage characteristics of the semiconductor heterojunction and the electro-optical dynamics of the active layer. It enables the laser and its electrical drive circuit to be analysed in a unified manner. The model can be easily implemented on general-purpose nonlinear circuit analysis programs, and does not require specialised laser analysis software. The model is illustrated with a number of simulated laser response characteristics.
DOI:10.1049/ip-i-1.1981.0044
出版商:IEE
年代:1981
数据来源: IET
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5. |
Effects of masking oxide on diffusion into silicon |
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IEE Proceedings I (Solid-State and Electron Devices),
Volume 128,
Issue 5,
1981,
Page 185-188
S.A.Abbasi,
A.Brunnschweiler,
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PDF (434KB)
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摘要:
During semiconductor processing it is common to use check slices to monitor individual process steps. Unfortunately, the sheet resistance values obtained from check slices do not always agree with actual resistor values made on slices diffused at the same time. The effect has been studied for the case of boron deposition from a vapour source and found to be real and due to the masking oxide which surrounds the resistor, but which is not present on the check slice. For a typical base diffusion, the sheet resistance in the masked region is about 30% higher than in the unmasked check slice. A series of experiments has shown that this effect occurs at the deposition stage and is independent of background concentration, surface orientation, oxide thickness and oxide growth conditions. On the other hand, the effect disappears if the boron is ion implanted, if a ‘spin-on’ source is used, or if silicon nitride is used as the mask instyead of silicon dioxide. This result has implications not only for resistor design but also for active device modelling, since practical devices are oxide masked, but the profiles are measured on large-area check slices.
DOI:10.1049/ip-i-1.1981.0045
出版商:IEE
年代:1981
数据来源: IET
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6. |
Publish and retrieve materials data with EMIS |
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IEE Proceedings I (Solid-State and Electron Devices),
Volume 128,
Issue 5,
1981,
Page 189-191
B.L.Weiss,
J.L.Sears,
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PDF (423KB)
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摘要:
EMIS (electronic materials information service) is a computer-based online system currently being developed by INSPEC for launch in October 1981. It gives textual and numeric information on the properties of specified materials used in solid-state electronics and on the suppliers of such materials. The database is interrogated by a very simple interactive technique. The user gains access to EMIS using the same equipment as is employed by information officers for searching online bibliographic databases.
DOI:10.1049/ip-i-1.1981.0046
出版商:IEE
年代:1981
数据来源: IET
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