IEE Proceedings I (Solid-State and Electron Devices)


ISSN: null        年代:1981
当前卷期:Volume 128  issue 5     [ 查看所有卷期 ]

年代:1981
 
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1. Experimental observation of switching in MISM and MISIM devices
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  5,   1981,   Page  161-164

M.Darwish,   K.Board,  

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2. Theory of switching in MISIM structures
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  5,   1981,   Page  165-173

M.Darwish,   K.Board,  

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3. Optical transient switching measurements on metal-insulator (tunnel)-silicon thyristor at 0.85 μm wavelength
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  5,   1981,   Page  174-179

R.B.Calligaro,   S.Moustakas,   J.Dell,   A.G.Nassibian,  

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4. Large-signal circuit model for simulation of injection-laser modulation dynamics
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  5,   1981,   Page  180-184

RodneyS.Tucker,  

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5. Effects of masking oxide on diffusion into silicon
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  5,   1981,   Page  185-188

S.A.Abbasi,   A.Brunnschweiler,  

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6. Publish and retrieve materials data with EMIS
  IEE Proceedings I (Solid-State and Electron Devices),   Volume  128,   Issue  5,   1981,   Page  189-191

B.L.Weiss,   J.L.Sears,  

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