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| 11. |
Investigation of multilayer metallisation in a gate array device using cross-sectional transmission electron microscopy |
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IEE Proceedings G (Circuits, Devices and Systems),
Volume 137,
Issue 1,
1990,
Page 53-56
S.F.Gong,
H.T.G.Hentzell,
A.Robertsson,
G.Radnoczi,
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PDF (589KB)
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摘要:
Cross-sectional transmission electron microscopy (XTEM) was used to investigate structures of a multilayer metallisation of an integrated circuit. Microstructures of thin films, interfaces, interconnections, step coverage and dislocations in the device were revealed. Good step coverage was observed when polyimide was used as an insulator between two metal layers. The results indicate that, with a proper technique of sample preparation, XTEM can be utilised as a unique way to characterise cross-sectional structures of very large scale integrated circuits.
DOI:10.1049/ip-g-2.1990.0011
出版商:IEE
年代:1990
数据来源: IET
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| 12. |
Low-voltage BIMOS AM front-end amplifier |
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IEE Proceedings G (Circuits, Devices and Systems),
Volume 137,
Issue 1,
1990,
Page 57-60
M.Steyaert,
Z.Chang,
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PDF (385KB)
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摘要:
A BIMOS AM front-end amplifier mixer is discussed. The advantages of BIMOS technology in the realisation of front-end amplifiers is demonstrated. Because of the low-voltage power supply, bipolar transistors are required for the mixer structure. It is shown that for low-noise applications an MOS input structure results in a better performance. The stability problem of a bipolar and MOS input structure is also analysed. It is shown that the MOS input structure has a better stability performance.
DOI:10.1049/ip-g-2.1990.0012
出版商:IEE
年代:1990
数据来源: IET
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Volume 137 issue 1