| 1. |
Surface step-dislocation transition and dislocation nucleation at a solid free surface |
| |
Philosophical Magazine Letters,
Volume 75,
Issue 3,
1997,
Page 125-130
N. Junqua,
J. Grilhe,
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ISSN:0950-0839
DOI:10.1080/095008397179660
出版商:Taylor & Francis Group
年代:1997
数据来源: Taylor
|
| 2. |
A mean-field theory of athermal martensite growth |
| |
Philosophical Magazine Letters,
Volume 75,
Issue 3,
1997,
Page 131-136
KevinM. Crosby,
R. Mark Bradley,
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|
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ISSN:0950-0839
DOI:10.1080/095008397179679
出版商:Taylor & Francis Group
年代:1997
数据来源: Taylor
|
| 3. |
Structure of a new orthorhombic crystalline phase in the Al-Cr-Pd alloy system |
| |
Philosophical Magazine Letters,
Volume 75,
Issue 3,
1997,
Page 137-142
Yoshie Matsuo,
Kazuki Yamamoto,
Yuko Iko,
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ISSN:0950-0839
DOI:10.1080/095008397179688
出版商:Taylor & Francis Group
年代:1997
数据来源: Taylor
|
| 4. |
Stress response by the strain-rate change in a binary stoichiometric Ni3Al single crystal |
| |
Philosophical Magazine Letters,
Volume 75,
Issue 3,
1997,
Page 143-148
Masahiko Demura,
Toshiyuki Hirano,
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ISSN:0950-0839
DOI:10.1080/095008397179697
出版商:Taylor & Francis Group
年代:1997
数据来源: Taylor
|
| 5. |
Interfacial observations of Ni/Ni3Si and Ni/Ni3Ga diffusion couples |
| |
Philosophical Magazine Letters,
Volume 75,
Issue 3,
1997,
Page 149-154
Z. Horita,
K. Fujiwara,
Y. Ootoshi,
N. Komai,
M. Watanabe,
M. Nemoto,
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ISSN:0950-0839
DOI:10.1080/095008397179705
出版商:Taylor & Francis Group
年代:1997
数据来源: Taylor
|
| 6. |
alpha beta Experimental evidence for alpha - and beta -phases of pure crystalline C3N4 in films deposited on nickel substrates |
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Philosophical Magazine Letters,
Volume 75,
Issue 3,
1997,
Page 155-162
Y AN Chen,
Liping Guo,
E.G. Wang,
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ISSN:0950-0839
DOI:10.1080/095008397179714
出版商:Taylor & Francis Group
年代:1997
数据来源: Taylor
|
| 7. |
Photodegradation in high-quality hydrogenated amorphous germanium |
| |
Philosophical Magazine Letters,
Volume 75,
Issue 3,
1997,
Page 163-168
T. Aoki,
H. Shimada,
W.Q. Sheng,
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ISSN:0950-0839
DOI:10.1080/095008397179723
出版商:Taylor & Francis Group
年代:1997
数据来源: Taylor
|
| 8. |
High-mobility low-threshold-voltage pentacene thin-film transistors prepared at rapid growth rates by pulsed-laser deposition |
| |
Philosophical Magazine Letters,
Volume 75,
Issue 3,
1997,
Page 169-177
A. J. Salih,
J.M. Marshall,
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ISSN:0950-0839
DOI:10.1080/095008397179732
出版商:Taylor & Francis Group
年代:1997
数据来源: Taylor
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