1. |
Microstructure of hot-pressed α-Sic after creep experiments at high temperature |
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Philosophical Magazine Letters,
Volume 60,
Issue 2,
1989,
Page 37-44
S.J. Lee,
G. Nouet,
J. Vicens,
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摘要:
Transmission electron microscopy analyses of hot-pressed α-Sic deformed at 1600°C have shown the activation of the basal plane with glide dislocations dissociated into Shockley partials. Loop nucleations have been frequently observed along the dislocation lines and a climb mechanism is proposed to explain, the experimental analyses.
ISSN:0950-0839
DOI:10.1080/09500838908206433
出版商:Taylor & Francis Group
年代:1989
数据来源: Taylor
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2. |
HREM examination of [101] screw dislocations in Ni3Al |
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Philosophical Magazine Letters,
Volume 60,
Issue 2,
1989,
Page 45-50
MartinA. Crimp,
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摘要:
The dissociation of [101] screw dislocations in Ni3Al has been examined using high-resolution electron microscopy. [101] superdislocations are found to be dissociated into (a/2)[101] superpartial dislocations on the (010) cube cross-slip plane. These superpartials in turn dissociate into complex stacking faults on the (111) or (111) which are bounded by Shockley partials in agreement with theoretical predictions. The degree of antiphase boundary spreading on (010) was found to increase with deformation temperature while the superpartial core dissociations remain unchanged.
ISSN:0950-0839
DOI:10.1080/09500838908206434
出版商:Taylor & Francis Group
年代:1989
数据来源: Taylor
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3. |
Direct observation of the atomic structure of a twin boundary layer in a superconducting Y-Ba-Cu-O ceramic |
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Philosophical Magazine Letters,
Volume 60,
Issue 2,
1989,
Page 51-55
Yimei Zhu,
Masaki Suenaga,
Youwen Xu,
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摘要:
Direct structural images of a twin boundary in a superconducting Y–Ba–Cu–O ceramic have been obtained at 0·19 nm resolution by high-resolution transmission electron microscopy and an image processing technique. It was found that theaandbplanes of a twin domain gradually change to thebandaplanes of a neighbouring twin domain across a twin boundary. This involves a shifting of the respective planes by a distance (⅓∼½)d(110)along the boundary as well as the rotation of the planes by ø ≃ 2(b−a)/(a + b) across the boundary. Also, this transition takes place within approximately four times the (110) interplanar spacingd(100), which is considered as the twin boundary layer thickness.
ISSN:0950-0839
DOI:10.1080/09500838908206435
出版商:Taylor & Francis Group
年代:1989
数据来源: Taylor
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4. |
Neutron reflectivity from a silicon nitride layer on a silicon substrate |
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Philosophical Magazine Letters,
Volume 60,
Issue 2,
1989,
Page 57-65
C.D. Ashworth,
S. Messoloras,
R.J. Stewart,
J.G. Wilkes,
I.S. Baldwin,
J. Penfold,
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摘要:
The neutron reflectivity from a sample consisting of a silicon nitride layer on a crystalline silicon substrate has been measured. The structure of the sample normal to the reflecting surface has been modelled to produce a scattering length density profile whose simulated reflectivity closely matches that experimentally determined. The layer thickness and the corresponding interface structures are detailed. Two modelling techniques have been used, one based on the well known Born and Wolf matrices and the other based on the Abeles method. The two techniques are compared and the sensitivity of the two techniques are discussed.
ISSN:0950-0839
DOI:10.1080/09500838908206436
出版商:Taylor & Francis Group
年代:1989
数据来源: Taylor
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5. |
Preparation-dependent relaxation in n-type a-Si:H |
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Philosophical Magazine Letters,
Volume 60,
Issue 2,
1989,
Page 67-71
G. Krötz,
J. Wind,
G. Müller,
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摘要:
After an initial anneal at 180°C, n-type a-Si: H specimens have been subjected to different combinations of illumination and quench treatments so as to produce identical Fermi-level positions after preparation. Contrary to expectations, we find that the differently prepared metastable states relax with significantly different rates, with activation energies ranging from almost zero to 1·8 eV. The relevance of these results is discussed in terms of existing models of the autocompensation process.
ISSN:0950-0839
DOI:10.1080/09500838908206437
出版商:Taylor & Francis Group
年代:1989
数据来源: Taylor
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6. |
Transport at the mobility edge in amorphous semiconductors. The importance of mesoscopic fluctuations |
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Philosophical Magazine Letters,
Volume 60,
Issue 2,
1989,
Page 73-78
Bernhard Kramer,
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摘要:
The results of the scaling theory of localization are briefly summarized. Special emphasis is placed on features which are of importance for electrical transport in amorphous semiconductors. The critical behaviour of the average d.c. conductivity near the mobility edge is used to explain the activated behaviour of the temperature-dependent conductivity. If the system is universal near the mobility edge, the prefactor of the activated conductivity is a number, which is given by the critical conductance divided by a characteristic length that may be interpreted as a mean phase breaking distance. The new and most important result is that the statistical properties of the conductance have to be taken into account when calculating the prefactor to obtain a quantitatively reasonable description. Thus mesoscopic fluctuations seem to have much wider consequences than assumed hitherto.
ISSN:0950-0839
DOI:10.1080/09500838908206438
出版商:Taylor & Francis Group
年代:1989
数据来源: Taylor
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7. |
Erratum |
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Philosophical Magazine Letters,
Volume 60,
Issue 2,
1989,
Page 79-79
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ISSN:0950-0839
DOI:10.1080/09500838908206439
出版商:Taylor & Francis Group
年代:1989
数据来源: Taylor
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