| 11. |
Silicon Epitaxial layers with non‐uniform doping profiles (II). The non‐uniform doping profile realization |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 33-37
J. Halaj,
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摘要:
AbstractIn Part I of the paper the epitaxial doping profile simulation program was described based on the Wong‐Reif trapping model for the SiCl4H2PH3system. This model is used in Part II to design the non‐uniform profile epilayer processing procedure accounting also for the parasitic effect of autodoping. Several epilayers with exponential doping profiles are realized. The resulting profiles exhibit very close agreement with the target p
ISSN:0232-1300
DOI:10.1002/crat.2170290110
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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| 12. |
F. Macášek, J. D. Navratil. Separation chemistry. Ellis Horwood, New York, 1992; 431 ps., 81 Figs., 3 Tabs.; ISBN 0‐13‐807660‐X |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 38-38
H. W. Kammer,
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ISSN:0232-1300
DOI:10.1002/crat.2170290111
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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| 13. |
Highly homogeneous polycrystalline HgTe synthesis under pressure |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 39-43
M. F. Lazarescu,
A. S. Manea,
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摘要:
AbstractA high pressure technique for the direct synthesis of polycrystalline HgTe in quartz ampoules is presented. An excess of mercury as well as a quasi‐static regime of the inert gas pressure at melt temperatures up to 750°C have been used. X‐ray diffraction and SEM confirmed the structural homogeneity of the synthesized mate
ISSN:0232-1300
DOI:10.1002/crat.2170290112
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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| 14. |
H. Lüth. Surfaces and interfaces of solids. Springer Series in Surface Sciences 15. Springer Verlag Berlin Heidelberg 1993, 487 S. 358 Abb. 12 Tab., Preis |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 44-44
R. Szargan,
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ISSN:0232-1300
DOI:10.1002/crat.2170290113
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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| 15. |
Tribochemical synthesis of halogen‐phosphate luminophores |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 45-49
G. G. Gospodinov,
V. M. Marchev,
V. Stoeva,
G. Yordanov,
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摘要:
AbstractThe possibility of tribochemical synthesis of Ca10(PO4)6· (F, Cl)2SbMn is shown. It was proved that the synthesis with the initial compounds CaHPO4· 2H2O or β‐Ca3(PO4)2is realized 1–2 hours faster than the synthesis when CaHPO4i
ISSN:0232-1300
DOI:10.1002/crat.2170290114
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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| 16. |
D. E. Bourne. P. C. Kendall. Vector analysis and cartesian tensors. Third edition Chapman&Hall. London‐Glasgow‐New York‐Tokyo‐Melbourne‐Madras 1992, Seitenzahl: 304, Zahl der Abbildungen und Tabellen: 115. ISBN: 0‐412‐42750‐8 |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 50-50
W. Pietzsch,
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ISSN:0232-1300
DOI:10.1002/crat.2170290115
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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| 17. |
Influence of size on the supercooling in the crystallization of small particles in Bismuth island films |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 51-59
N. T. Gladkikh,
V. I. Larin,
S. A. Maiboroda,
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摘要:
AbstractThere has been measured the crystallization temperature of supercooled Bi particles versus their size in the 3–100 nm range in island films on amorphous carbon substrates. Crystallization temperature is found to decrease with particle size decreasing and the supercooling vanishes for particles of 2–3 nm in diameter. The results obtained are analyzed in the frame of the classic theory of crystallizat
ISSN:0232-1300
DOI:10.1002/crat.2170290116
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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| 18. |
L. B. Magalas, S. Gorczyna (eds). Internal friction and ultrasonic attenuation in solids including high‐Tcsuperconductors. Trans Tech Publications Switzerland, Germany, UK, USA (Matreials Science Forum vols. 119–121), 1993, 853 p., SRf 340.00, ISBN 0‐87849‐623‐8 |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 60-60
D. Klimm,
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ISSN:0232-1300
DOI:10.1002/crat.2170290117
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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| 19. |
Investigation of the thermal conditions during silicon carbide crystal growth |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 61-67
S. K. Lilov,
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摘要:
AbstractIn the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was drawn a conclusion that in order to decrease the density of dislocations in the growing crystals it is necessary to decrease the temperature gradients in the crucible for growing.
ISSN:0232-1300
DOI:10.1002/crat.2170290118
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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| 20. |
Investigation of the role of crystal growth zone during silicon carbide growth by the sublimation method |
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Crystal Research and Technology,
Volume 29,
Issue 1,
1994,
Page 69-75
S. K. Lilov,
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摘要:
AbstractThe dependence of the growth rate of SiC crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of SiC crystals with maximum sizes.
ISSN:0232-1300
DOI:10.1002/crat.2170290119
出版商:WILEY‐VCH Verlag
年代:1994
数据来源: WILEY
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