摘要:

AbstractIon channeling spectra of as‐grown CuInTe2single crystals are measured using a 2 MeV4He+analysing beam. It is found that the measured minimum yields cannot be explained within a model of randomly distributed non‐interacting point defects caused by deviations from ideal stoichiometry. A model with extended defects due to vacancy clustering and dislocation formation is proposed to interprete the experimental resu

ISSN:0232-1300    

DOI:10.1002/crat.2170300119

出版商:WILEY‐VCH Verlag    

年代:1995

数据来源: WILEY

摘要:

AbstractThe purpose of the presented paper is to find out what kinds of information on surface layer structure of implanted silicon after rapid thermal annealing can be acquired by such non‐destructive methods as X‐ray diffractometry and its complementary RHEED technique.The experiments were performed on Si crystals implanted with Bi ions.The studies showed that using the anomalous X‐ray transmission of the wavelength of 1.54 Å we are able to determine the defect concentration introduced by ion implantation with different doses as well as the effects of defect annealing.It was also shown using the REED that the surface layer of ca. 50 Å thick remains amorphous after RTA probably due to the oxidation. The measurements by using SIMS pointed also out that at the crystal surface there was a small amount of Bi atoms accumulated af

ISSN:0232-1300    

DOI:10.1002/crat.2170300120

出版商:WILEY‐VCH Verlag    

年代:1995

数据来源: WILEY

摘要:

AbstractElectrical conductivity (σ) and Hall coefficient (RH) of single crystal grown from the melt have been investigated over the temperature range from 398 K to 673 K. Our investigation showed that our samples are p‐type conducting. The dependence of Hall mobility an charge carrier concentration on temperature were presented graphically. The forbidden energy gap was calculated and found to be 1.79 eV. The ionization energy of impurity level equals 0.32 eV approximately. At 398 K the mobility equals to 8670 cm2V−1s−1and could described by the law μ =aTn(n= 1.6) in the low temperature range. In the high temperature range, adopting the law μ =bT–m(asm= 1.67), the mobility decreases. This result indicates that in the low temperature range the dominant effect is scattering by ionized impurity atoms, whereas in the high temperature range the major role is played by electron scattering on lattice vibrations (phonons). At 398 K the concentration of free carriers showed a value of about 1.98

ISSN:0232-1300    

DOI:10.1002/crat.2170300121

出版商:WILEY‐VCH Verlag    

年代:1995

数据来源: WILEY

摘要:

Abstractα‐LiIO3crystal is an essential quasi‐one‐dimensional ionic conductor, and its ionic conductivity is typically anisotropic. The activation energy of α‐LiIO3has been calculated by the dielectric breakdown method. The calculating result shows that the anisotropism of the activation energy is consistent with that of con

ISSN:0232-1300    

DOI:10.1002/crat.2170300122

出版商:WILEY‐VCH Verlag    

年代:1995

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170300101

出版商:WILEY‐VCH Verlag    

年代:1995

数据来源: WILEY