摘要:

AbstractThe value of AlAs lattice constant was established in two ways. First, by extrapolating the results for AlxGa1−xAs LPE (aAlAs= 5.6608 Å) and MBE grown epitaxial layers (aAlAs= 5.6620 ± 0.0001 Å). Second, for AlAs MBE‐grown epitaxial layer (aAlAs= 5.6620 ± 0.0001 Å). The measurements were performed with a high accuracy X‐ray diffractometer and compared with results of photoluminescence me

ISSN:0232-1300    

DOI:10.1002/crat.2170270118

出版商:WILEY‐VCH Verlag    

年代:1992

数据来源: WILEY

摘要:

AbstractThe Kossel effect permits a determination of polar directions in non‐centrosymmetrical structures. To identify polar reflections unambiguously, differences — as large as possible — in their fine structures are necessary. These differences considerably depend on both the diffraction geometry and the characteristic X‐ray wavelength applied. The reasons of such behaviour are deliberated upon hereinafter and a good harmony achieved of theoretical predictions and experimental f

ISSN:0232-1300    

DOI:10.1002/crat.2170270119

出版商:WILEY‐VCH Verlag    

年代:1992

数据来源: WILEY

摘要:

AbstractAs the first time the evaporation behaviour of trimethylindium‐trimethylamine (TMIn‐TMN) was investigated with a flame ionisation method. Individual metalorganic components can be detected in rather low concentrations (10−2Torr) in a hydrogen carrier gas. A reproducible and constant supply could be realised with the solid TMIn‐TMN‐adduct in accordance with the equation for the vapour pressure: Igp= −2597 ·T−1+ 8.748 (pin Torr) in the temperature range 273 K

ISSN:0232-1300    

DOI:10.1002/crat.2170270120

出版商:WILEY‐VCH Verlag    

年代:1992

数据来源: WILEY

摘要:

AbstractThe Electron Spin Resonance of Mn2+in natural crystals of hemimorphite was studied at RT, X‐band. No fine structure other than the central M = | + 1/2 〉 ⇆ | −1/2>transition with allowed (Δm= 0) and forbidden (Δm= ±1) hyperfine transitions were observed.The spectrum was fitted with the spin Hamiltonian parameters g = 2.001,A= −84.6 × 10−4cm−1. The crystal field parameterDwas estimated equal to (8 ± 2) × 10−3cm−1. The most striking result is the size of the hyperfine splitting constant favoring occupancy of si

ISSN:0232-1300    

DOI:10.1002/crat.2170270121

出版商:WILEY‐VCH Verlag    

年代:1992

数据来源: WILEY

摘要:

AbstractCalculation of interface shape for oriented eutectic growth has been proposed for regular structure formation. The constant interface curvature has been applied in the analysis. The obtained function contains some physical factors which affects the formation of concave‐convex interface. The proposed approach has been related to the theory of completely coupled growt

ISSN:0232-1300    

DOI:10.1002/crat.2170270122

出版商:WILEY‐VCH Verlag    

年代:1992

数据来源: WILEY

摘要:

AbstractDefect engineering in the CZ‐silicon high‐voltage substrate technology with a polycrystalline support needs very deep denuded zones, which enclose the whole volume of the monocrystalline islands. The formation of crystal defects is compared in the substrate fabrication process with and without an outdiffusion annealing (15 h at 1250°C), respectively. The gettering efficiency of the polycrystalline support and of the buried layer at the island bottom has been studied. The influence of the defect density and the heavy metal contamination on the device parameters has been investigated at a high voltage p‐n‐p lateral tr

ISSN:0232-1300    

DOI:10.1002/crat.2170270123

出版商:WILEY‐VCH Verlag    

年代:1992

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170270101

出版商:WILEY‐VCH Verlag    

年代:1992

数据来源: WILEY