| 1. |
The Study of Colour Centers in NaF:U Single Crystals Co‐doped with Pb2+ |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 45-48
A. A. Alybakov,
V. A. Gubanova,
Z. M. Kazakbaeva,
M. M. Kidibaev,
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ISSN:0232-1300
DOI:10.1002/crat.2170270324
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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| 2. |
Crystal and Molecular Structure of 5‐Fluorocytosine‐Cobalt (II) Complex |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 49-51
Udai P. Singh,
Animesh K. Ghose,
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PDF (131KB)
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ISSN:0232-1300
DOI:10.1002/crat.2170270325
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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| 3. |
Thermopower ‐ the Probe for Oxygen Nonstoichiometry of YBa2Cu3o7−δSuperconductor |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 52-56
M. Vlček,
L. Beneš,
J. Horák,
P. Kottman,
V. Skácel,
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PDF (205KB)
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ISSN:0232-1300
DOI:10.1002/crat.2170270326
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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| 4. |
Spectral Absorption Properties of Pr3+in Cadmium (II) Maleate Dihydrate Single Crystals |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 57-60
M. V. Ramana,
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PDF (197KB)
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ISSN:0232-1300
DOI:10.1002/crat.2170270327
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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| 5. |
Crystal Growth in Gels at Elevated Pressures: The Upper Limit of Temperature for Metastable Formation of Aragonite |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 295-299
Walter A. Franke,
Nosrat‐Aga Mehran,
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摘要:
AbstractBoth rapid precipitation and diffusion controlled gel growth were applied to crystallize calcium carbonate at temperatures in the range of 100 °C to 270 °C. The amount of aragonite was determined by means of X‐ray diffraction data. The morphology of the aragonite crystals are described. Metastable formation of aragonite was observed only at temperatures below 270
ISSN:0232-1300
DOI:10.1002/crat.2170270302
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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| 6. |
S. Sengupta (Ed.). Lattice Theory of Elastic Constants. Trans Tech Publications Ltd., Aedermansdorf, Switzerland 1988. 240 p., SFr 120.00. ISBN 0‐87849‐564‐9 |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 300-300
P. Paufler,
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ISSN:0232-1300
DOI:10.1002/crat.2170270303
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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| 7. |
Crystal Growth in Gel: Nuclei and Precipitation Distribution in Gel |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 301-309
O. A. Brevnova,
L. L. Goshka,
V. P. Ruzov,
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摘要:
AbstractThe investigation of the gel structure and properties influence upon the crystallization processes have been carried out and are reported in this paper. The gel acidity and nucleation centers distribution are chosen as the parameters describing this process. The analytical approximations for the nucleation and precipitation density along the gel column are proposed. It has been shown that in the view of the parameters chosen it is impossible separately to determine the gel structure and proton concentration effects on crystallization processes.
ISSN:0232-1300
DOI:10.1002/crat.2170270304
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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| 8. |
M. G. Astles. Liquid‐Phase Epitaxial Growth of III–V Compound Semiconductor Materials and their Device Applications. Adam Hilger, Bristol, Philadelphia und New York 1990, 221 seiten, zahlreiche Abbildungen und Tabellen, 390 Quellennachweise, Sachwörterverzeichnis, £‐37.50, ISBN 0‐7503‐0044‐2 |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 310-310
V. Gottschalch,
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ISSN:0232-1300
DOI:10.1002/crat.2170270305
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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| 9. |
Growth and Characterization of Direct‐connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 311-320
L. B. Chang,
H. Lan,
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摘要:
AbstractHigh output power (above 3 mW/facet) AlGaAs/GaAs Transverse‐Junction Stripe light emitting diodes have been grown on Semi‐Insulating (100) GaAs substrates by Liquid Phase Epitaxy. these light emitting diodes utilize a “Direct‐connecting” transverse‐junction stripe structure, which can confine the transverse‐current and reduce the series resistance. By thinning the thickness of the “effective active‐layer” of this structure, a room‐temperature pulsed lasing operation is also achieved with a threshold current as low as 35 mA and a peak wavelength around 904 nm. This “Direct‐connecting” transverse‐Junction Stripe light emitting device with a Metal‐Semiconductor Field Effect Transistor on an electrical isolated semi‐i
ISSN:0232-1300
DOI:10.1002/crat.2170270306
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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| 10. |
Growth and Properties of BeO · 3 Al2O3(BHA) Single Crystals |
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Crystal Research and Technology,
Volume 27,
Issue 3,
1992,
Page 321-328
Pan Peicong,
Ma Xiaoshan,
Hu Zhiwei,
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摘要:
AbstractLarge single crystal of BeO · 3 Al2O3(beryllium hexa‐aluminate or BHA) doped with chromium up to 20 mm in maximum diameter and 60 mm long were grown by Czochralski method. Thechnological conditions of crystal growth have been introduced and key factor leading to a successful growth is a adequate composition of starting charge mixture other than stoichiometry. The crystal structure, absorption spectra and fluorescence spectra of BHA: Cr3+have been measured. Vibronic side band of the fluorescence spectra is from 700 nm to 900
ISSN:0232-1300
DOI:10.1002/crat.2170270307
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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