ISSN:0232-1300    

DOI:10.1002/crat.2170241120

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170241121

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170241122

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170241123

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY

摘要:

AbstractCrystallization of titanium nitride was conducted by the CVD method in a temperature range from 950 to 1450 °C using a TiCl4+ N2+ H2gas mixture. The influence of type of substrate used on the growth on TiN whiskers was studied. It was ascertained that the growth of TiN whiskers took place at a substrate temperatureT≧ 1200 °C. On the basis of optical microscope and SEM observations and also of X‐ray examination and measurement of angles using an optical reflection goniometer, a detailed description was made of the observed TiN whiskers growth forms. It was found that [111], [110]and [001] whiskers exhibit tip shapes that are characteristic of the given orientation. From the Hartman PBC theory the nature of the faces occurring was determined. It was also shown that the most important is the {111} F face. The stoichiometric composition of the TiN whiskers obtained was estimated and it was ascertained that these whiskers have a composition from Ti0.98to TiN

ISSN:0232-1300    

DOI:10.1002/crat.2170241102

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY

摘要:

AbstractIn given work the crystal growth kinetics connected with some refractory and transition metals is considered. For melts of Fe, Co, Ni, Cr, Zr, Ti, Ag, Cu, and Pb in the vicinity of melting temperatures the solid phase growth is described by means of a fluctuation theory applied for the macro‐systems. By virtue of the “unlimited” and limited spectrum solid state particle concentration fluctuations' theory some effective kinetic coefficients have been estimated in the work. The effective kinetic coefficients are specific in the case of normal crystal growth kinetics. In the case of the crystallization of Fe, Co, Ni, Cr, Zr, Ti, Ag, Cu, and Pb‐melts a comparison between two effective kinetic coefficients (based on the fluctuation theory and so‐called equilibrium growth points density) has been realized. In most cases a satisfactory agreement between the effective kinetic coefficients has been

ISSN:0232-1300    

DOI:10.1002/crat.2170241103

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY

摘要:

AbstractA modified low pressure in‐situ synthesis LEC method of growing undoped SI (semi‐insulating) GaAs crystals has been established. The key points for controlling melt composition and As evaporation during synthesis and growth have been described. Using this novel approach, crystals are able to be grown from the nominal melt composition in the range of 0.491–0.499 As fraction with high reproducibility. Some characteristics of the undoped SI crystals grown by the present work including electrical properties, dislocation density, carbon and EL2 concentrations and thermal annealing effects have been st

ISSN:0232-1300    

DOI:10.1002/crat.2170241104

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY

摘要:

AbstractThe growth rates of crystal interfaces have been measured by using a new technique — the laser diffraction metering technique. It is simple, visualized, fast and has high precision. This paper describes the basic principle, operation method and the precision of the techniqu

ISSN:0232-1300    

DOI:10.1002/crat.2170241105

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY

摘要:

AbstractThe method of liquid epitaxial growth of GaAs/AlGaAs/GaAs heterostructures when the change of solutions occurs due to pushing off one melt by another is discussed. It has been shown theoretically and experimentally that the initial stages of film growth after the change of the binary GaAs melt on the ternary AlGaAs melt differ from that when the GaAs solution pushes off the AlGaAs liquid. The difference is caused by the inequality of the diffusion coefficients of As and Al in a multicomponent AlGaAs liquid (DAl>DAs). As a result, the growth of an AlGaAs film begins immediately in the case when the AlGaAs solution pushes off the GaAs liquid but in the opposite case the dissolution of an underlying AlGaAs solid is unavoidable and depends little on degree of a saturation of the GaAs washing solution. These peculiarities must be taken into account in discussions of abruptness and other properties of LPE‐grown AlGaAs/GaAs and Ga

ISSN:0232-1300    

DOI:10.1002/crat.2170241106

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY

摘要:

AbstractIn order to find a generalized entropy production for steady‐state eutectic growth the entropy production per unit time and volume is to be determined. A relationship which expresses the entropy production per unit time and volume as a function of KRUPKOWSKI's equations is shown. It is in a qualitative accuracy with LESOULT‐TURPIN's theory. The above quantity is to be integrated over a distinguished volume of the unidirectionally solidified eutectic structure. A correlation between this volume and entropy production is discus

ISSN:0232-1300    

DOI:10.1002/crat.2170241107

出版商:WILEY‐VCH Verlag    

年代:1989

数据来源: WILEY