| 1. |
Absorption Spectrum of VO2+in Cadmium Maleate Dihydrate Single Crystals |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 185-188
K. Ravindra Babi,
M. V. Ramana,
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ISSN:0232-1300
DOI:10.1002/crat.2170260830
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 2. |
Microhardness Anisotropy in Some Cubic Crystals with Different Point Groups |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 189-192
T. Thirmal Rao,
K. Kishan Rao,
D. B. Sirdeshmukh,
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ISSN:0232-1300
DOI:10.1002/crat.2170260831
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 3. |
EPR Study of VO2+‐doped N2H6SO4 |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 193-196
G. Narsinga Rao,
D. Suresh Babu,
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ISSN:0232-1300
DOI:10.1002/crat.2170260832
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 4. |
Strong or Weak Adsorption in the Case of Low‐pressure Silicn Deposition from Silane at Moderate Temperatures? |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 197-202
H. Kuhne,
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ISSN:0232-1300
DOI:10.1002/crat.2170260833
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 5. |
Iron Impurities of Aqueous KOH‐Etchants for Silicon Wafers Introduction |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 203-205
M. Neubert,
B. Nippe,
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ISSN:0232-1300
DOI:10.1002/crat.2170260834
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 6. |
Melt Growth of CdTe Crystals and Transmission Electron Microscopic Investigations of their Grain Boundaries |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 967-972
I. V. Sabinina,
A. K. Gutakovski,
T. I. Milenov,
N. N. Lyakh,
Y. O. Sidorov,
M. M. Gospodinov,
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摘要:
AbstractTransmission electron microscopy investigations are carried out on CdTe crystals grown in quartz ampoules in a temperature region (1020–1091 °C) near to the melting point of 1092 °C, by travelling heater method in quasi‐closed and in sealed (at 0.135 Pa) volume, and by the Bridgman method from nearly stoichiometric melts. An original method for preparation of CdTe thin foil is reported. Two types of grain boundaries are observed: high‐angle misoriented grain boundaries (more than ten degrees misorientation between adjacent grains) and low‐angle misoriented grain boundaries (less than one degree misorientation between adjacent sub‐grain). Both dislocations with Burgers vectorb=a/6 〈112〉 andb=a/2
ISSN:0232-1300
DOI:10.1002/crat.2170260802
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 7. |
Influence of the Instantaneous Cooling Rate on Interface Shape during Temperature Gradient Technique (TGT) |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 973-980
Pan Peicong,
Lu Zhiying,
Gan Fuxi,
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摘要:
AbstractBoth analytical and numerical techniques show that the instantaneous cooling rate causes the interface to become increasingly concave in Temperature Gradient Technique. Dimensionless numberDe=R2QCpC0/[K(Th‐Tc)] is defined to express the extent in which the interface becomes more concave caused by the instantaneous cooling rat
ISSN:0232-1300
DOI:10.1002/crat.2170260803
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 8. |
Rapid Thermal Diffusion of Zinc in GaAs |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 981-986
E. Nowak,
G. Kühn,
T. Morgenstern,
B. Schumann,
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摘要:
AbstractRapid thermal diffusion of zinc into semi‐insulating GaAs from spin‐on silica films was investigated for various temperatures and heating rates with halogen lamps as the heat source. Dependent on the heating rate two types of SIMS profiles were observed. The degree of electrical activation of zinc was different as measured by the Hall effect. In some cases at high zinc concentrations, a ZnGa2O4film on the GaAs surface was for
ISSN:0232-1300
DOI:10.1002/crat.2170260804
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 9. |
Microinhomogeneities of Charge Carrier Concentration in GaAs |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 987-992
T. Kallenowsky,
H. Koi,
H. Boudriot,
O. Oettel,
H. A. Schneider,
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摘要:
AbstractThe tendency towards higher and higher integration of electronic components leads to increased requirements to the quality of the base material. The main requirement is homoneity of sturctural and related electronic and optoelectronic crystal properties of the base material within microscopic (and still decreasing) areas, in correspondence with the specific application.This paper is to present investigations of the correlation between local fluctuations of the charge carrier concentration and the occurrence of growth‐related striations in terms of IR absorptio
ISSN:0232-1300
DOI:10.1002/crat.2170260805
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 10. |
On the Bonding Types of V, Cr, …, Ga |
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Crystal Research and Technology,
Volume 26,
Issue 8,
1991,
Page 993-1000
K. Schubert,
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摘要:
AbstractThe electron correlations model allows to interpret the numerous structural phenomena in the elements V, …, Ga by merely two bonding types (FB2 and FB2). In Ge a third type (FB2C4) replaces the two types. The small number of bonding types suggests an improved approximation of the model to the observation
ISSN:0232-1300
DOI:10.1002/crat.2170260806
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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