1. |
Powder XRD Study on Urea ‐ Biuret (Habit Modifer) System |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 105-107
P. B. V. Prasad,
G. Sambasiva Rao,
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ISSN:0232-1300
DOI:10.1002/crat.2170270725
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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2. |
The Hydrothermal Systhesis of Cookeit and Morphological Changing by Increasing by Temperature |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 108-111
H. Ghobarkar,
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ISSN:0232-1300
DOI:10.1002/crat.2170270726
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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3. |
ZnSe:Al Single Crystals with 10H polytype structure |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 112-114
J. Gosk,
M. J. Kozielski,
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ISSN:0232-1300
DOI:10.1002/crat.2170270727
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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4. |
Crystal Growth and Differential Thermal Analysis of Mercuric Iodide Crystals |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 115-118
Shi‐Fu Zhu,
Zheng‐Hui Li,
Bei‐Jun Zhao,
Guan‐Xiong Chen,
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ISSN:0232-1300
DOI:10.1002/crat.2170270728
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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5. |
Growth and Spectrometric Tests on Bi4Ge3O12Crystals |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 891-896
I. Dafinei,
Gh. Mitroaica,
T. Angelescu,
I. Niculescu,
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摘要:
AbstractA resistance‐heated furnace with a good control of temperature gradients is used for the Czochralski growth of precipitate and colour free Bi4Ge3O12(BGO) crystals up to 30 mm in diameter and 80 mm in length from a 45 mm diameter crucible. The quality of the grown crystals is discussed in connection with the growth conditions.Spectrometric tests made on scintillators obtained from BGO crystals are presented. A Monte Carlo program is used in order to compute the full energy peak efficiency of the detector for different energies and geometries. The computed values are compared to the experimental result
ISSN:0232-1300
DOI:10.1002/crat.2170270702
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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6. |
Crystal Growth of Lead (II) Iodide from the Melt |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 897-902
J. Eckstein,
B. Erler,
K. W. Benz,
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摘要:
AbstractBulk Pbl2crystals up to 20 cm3have been grown from high purity source material in a controlled way using a modified Bridgman‐Stockbarger technique. The cleavage plane (0001) of crystals grown by a natural seed selection in a tipped‐end ampoule is nearly parallel to its axis. On a mica substrate epitaxially grown crystals cleaved perpendicularly to the axis of a specially designed double wall ampo
ISSN:0232-1300
DOI:10.1002/crat.2170270703
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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7. |
Crystallizaton Characteristics of the Alternating Tetrafluoroethylene‐Ethylene Copolymer |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 903-910
A. Dobreva,
A. Nikolov,
G. Kostov,
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摘要:
AbstractThe alternating tetrafluoroethylene‐ethylene (TFE‐E) copolymer has been studied with respect to its crystallization by using differential scanning calorimetry and optical microscopy. The value of the specific surface energy σ at the melt/crystal interface is calculated to be about 2 · 10−3J/m2. The nucleating activity Φ of TiO2particles introduced into TFE‐E copolymer is estimated to be approximately 0.9. The temperature dependence of the nucleation rate and of the linear growth velocity are constructed in the whole region from the melting temperatureTmto the vitrification temperatureTg. The minimum cooling rate for the formation of a crystal‐free TFE‐E copolymer glass is calculated and its value amounts t
ISSN:0232-1300
DOI:10.1002/crat.2170270704
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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8. |
A Thorough Reconsideration of in‐situ Doping Theory of Epitaxial Silicon Layers |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 911-917
H. Kühne,
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摘要:
AbstractThe adsorption‐desorption limited doping mechanism as suggested by REIFand DUTTONto explain in‐situ doping of epitaxial CVD silicon layer will thoroughly be discussed in comparison to the more general transport‐reaction limited mechanism as originally suggested by SHEPERD, Distinctive and common features will be highilighted and discussed with respect to composite layer g
ISSN:0232-1300
DOI:10.1002/crat.2170270705
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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9. |
G. Ferguson (General ed.), J. Trotter (Section ed). Structure Reports for 1989. Vol. 56A. Kluwer Academic Publ. Dordrecht‐Boston‐London 1991. 293 p. Peris Dlf. 130.00. US$ 76.00; UK £ 40.00. ISBN 0‐7923‐1078‐0 |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 918-918
P. Paufler,
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ISSN:0232-1300
DOI:10.1002/crat.2170270706
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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10. |
On the Critical Growth Velocities for the Presence of Faces on Growing Crystals |
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Crystal Research and Technology,
Volume 27,
Issue 7,
1992,
Page 919-929
Marian Szurgot,
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摘要:
AbstractFaces of three‐dimensional crystals have been divided into edge and corner ones to describe the phenomenon of their disappearance and appearance during the crystal growth. The expression for the critical growth velocity governing the presence of corner faces has been derived and verified and the validity of the previous relationship (SZURGOT, PRYWER) for the edge faces confirmed. Three nearest neighbours control the presence of corner faces and two neighbours decide on the edge face
ISSN:0232-1300
DOI:10.1002/crat.2170270707
出版商:WILEY‐VCH Verlag
年代:1992
数据来源: WILEY
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