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| 1. |
X‐ray High Pressure and DSC Investigation of 4 – trans –4‐Hexyl‐cyclohexylisothiocyanatobenzene (6CHBT) |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 65-68
J. Przedmojski,
H. Dabrowski,
K. Czuprynski,
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ISSN:0232-1300
DOI:10.1002/crat.2170300728
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 2. |
Alkaline Polishing of InP Using Double‐Pouring Technique |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 69-72
Jiang Wei,
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PDF (131KB)
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ISSN:0232-1300
DOI:10.1002/crat.2170300729
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 3. |
Twinning in LEC‐grown InP Crystal |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 73-77
Jiang Wei,
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PDF (198KB)
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ISSN:0232-1300
DOI:10.1002/crat.2170300730
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 4. |
Vapour Overgrowth on the Cleavage Face of SnSe Single Crystals |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 78-81
S. M. Vyas,
C. R. Pandya,
C. F. Desai,
C. T. Amin,
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PDF (153KB)
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ISSN:0232-1300
DOI:10.1002/crat.2170300731
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 5. |
G. L. Trigg (ed.). Encyclopedia of Applied Physics. Vol. 8. Inductors to Magnetic Devices. VCH Verlagsgesellschaft mbH, Weinheim 1994, pp. 611, price hardbound DM 450, – ISBN 3–527–28127–4 |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 82-82
P. Paufler,
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ISSN:0232-1300
DOI:10.1002/crat.2170300732
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 6. |
S. K. Saxena, N. Chatterjee, Y. Fei, G. Shen. Thermodynamic Data on Oxides and Silicates. Springer‐Verlag Berlin, 1993. VIII + 428 pp., 34 Figs. Hardcover DM 148,00. ISBN 3–540–56898–0 |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 83-83
P. Paufler,
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ISSN:0232-1300
DOI:10.1002/crat.2170300733
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 7. |
Classification of Mechanoluminescence |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 885-896
B. P. Chandra,
A. S. Rathore,
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摘要:
AbstractOn the basis of the processes involved in inducing luminescence, mechanoluminescence (ML) may be classified into different types, such as: (i) piezo‐electrification‐induced fracto ML, (ii) defective‐phase piezo‐electrification‐induced fracto ML, (iii) charged dislocation electrification‐induced fracto ML, (iv) baro diffusion electrification‐induced fracto ML, (v) chemically‐induced fracto ML, (vi) thermally stimulated fracto ML, (vii) incandescent fracto ML, (viii) stress perturbation‐induced fracto ML, (ix) thermal excitation‐induced fracto ML, (x) mechanically excited ML, (xi) deep trap‐induced fracto ML, (xii) dislocation mechanical interaction‐induced plastico ML, (xiii) dislocation electrostatic interaction‐induced plastico ML, (xiv) charged dislocation electrification‐induced plastico ML, (xv) thermal excitation‐induced plastico ML, (xvi) dislocation mechanical interaction‐induced elastico ML, (xvii) dislocation electrostatic interaction‐induced elastico ML, (xviii) thermal excitation‐induced elastico ML, (xix) electrically induced tribo ML, (xx) chemically‐induced tribo ML, (xix) electrically induced tribo ML, (xx) chemically‐induced tribo ML, and (xxi) thermally‐induced tribo ML. It is expected that the processes involving dislocation electrostatic interaction‐induced elastico ML and thermal excitation‐induced elastico M
ISSN:0232-1300
DOI:10.1002/crat.2170300702
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 8. |
Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 897-909
C. Frank,
K. Hein,
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摘要:
AbstractGaAs crystals having dislocation densities of 1–2 103cm−2were grown using VGF technique. In the grown crystals SiGais the dominant donor and CAsthe dominant acceptor. Theoretical and experimental investigations have shown the possibilities to influence on the silicon and carbon content in GaAs. Based on these results, semiinsulating properties in the crystals could be achieved reproduci
ISSN:0232-1300
DOI:10.1002/crat.2170300703
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 9. |
J. H. Edgar (ed.). Properties of Group III Nitrides. (EMIS Datareviews Series No. 11). INSPEC, The Institution of Electrical Engineers, London 1994. 302 Seiten, 121 Abbildungen, 77 Tabellen. ISBN 0–85296–818–3 |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 910-910
H. Neumann,
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ISSN:0232-1300
DOI:10.1002/crat.2170300704
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 10. |
Crystallization Kinetics of Sodium Perborate |
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Crystal Research and Technology,
Volume 30,
Issue 7,
1995,
Page 911-919
Ing.I. Livk,
Ing.M. Smodiš,
Prof. Dr. Ing.J. Golob,
Prof. Dr. Ing. sc.C. Pohar,
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摘要:
AbstractSome basic physicochemical properties of aqueous sodium perborate solutions, essential in designing an effective control, were measured. The kinetics of primary nucleation was determined by the measurement of the metastable zone width. The differential method was applied for the determination of the crystal growth rate equation. It was found that the solubility and the nucleation rate constants are in very good agreement with the literature data whereas the parameters of the growth rate equation show an influence of the experimental conditions.
ISSN:0232-1300
DOI:10.1002/crat.2170300705
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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