| 1. |
On the Nature of Radiation Defects Responsible for Fermi Level Pinning Effect in InP |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 129-135
N. B. Pyshnaya,
S. I. Radatsan,
I. M. Tiginyanu,
V. V. Ursaki,
V. A. Ursu,
I. M. Aliev,
H. A. Halilov,
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ISSN:0232-1300
DOI:10.1002/crat.2170260629
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 2. |
Crystal Growth and Elastic Properties of Tetragonal NaBi (MoO4)2 |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 136-140
S. Haussühl,
J. Liebertz,
H. Schmidt,
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ISSN:0232-1300
DOI:10.1002/crat.2170260630
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 3. |
Growth and Characterisation of NaNO3Single Crystals |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 141-146
R. Gopalakrishnan,
D. Arivuoli,
P. Ramasamy,
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ISSN:0232-1300
DOI:10.1002/crat.2170260631
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 4. |
Investigation of Capping Growth of Urea in Different Solvents |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 147-150
Huang Bingrong,
Su Genbo,
Pan Feng,
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ISSN:0232-1300
DOI:10.1002/crat.2170260632
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 5. |
Temperature Dependence of Lattice Parameters of Te and Te + 2 at. % Se Single Crystals in the Range 10 – 300 K |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 151-155
J. Stȩpień‐Damm,
I. I. Farbstein,
N. K. Shulga,
P. Fedczyszyn,
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ISSN:0232-1300
DOI:10.1002/crat.2170260633
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 6. |
IR‐device Grade (Hg, Cd)Te Crystals Grown by a Modified Bridgman Method |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 667-674
H. Bittner,
P. Höschl,
B. Schubert,
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摘要:
AbstractElectrical and photoelectrical properties of IR‐devices manufactured on (Hg, Cd)Te‐wafers cut from single crystals grown by modified Bridgman method are reported and compared to those of devices made on THM‐(Hg, Cd)Te.MIS‐structures and photodiodes were used in order to investigate the different materials.The influence of material parameters and device technology respectively is involved in our discussion of device properties. The quality of modified Bridgman‐(Hg, Cd)Te was found to be comparable to that of the THM‐(Hg, Cd)Te.AtT= 80 K and FOV = 60° background limited detectivity of photodiodes with a cut‐off wavelength of λco= 10.7
ISSN:0232-1300
DOI:10.1002/crat.2170260602
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 7. |
Transport Coefficient of Gallium‐doped Bi2Te3Single Crystals |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 675-681
J. Navrátil,
P. Lošťák,
J. Horák,
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摘要:
AbstractGallium‐doped Bi2Te3single crystals were prepared by means of a modified Bridgman method. Temperature dependences of the Hall constantRH(B∥c), electrical conductivity σ⊥cand Seebeck coefficientS(ΔT⊥c) were measured on the samples of these crystals in the temperature interval of 100–400 K. The variations of the investigated transport coefficients with increasing Ga content in the samples showed that Ga atoms in the Bi2Te3crystal lattice behave as donors. This effect is qualitatively explained on the basis of a model of point defects in Bi2Te3(Ga) crystals; singly ionised gallium atoms in interstitial sites; Gai, are considered to be the most proba
ISSN:0232-1300
DOI:10.1002/crat.2170260603
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 8. |
S. G. Roberts, D. B. Holt, P. R. Wilshaw )eds( Structure and properties of dislocations in semiconductors 1989. Proc. 6thInt. Symp. on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford 5–8 April 1989. Institute of Physics Conference Series Number 104. Institute of Physics, Bristol and New York 1989. XVIII + 470 Seiten. Preis £ 55.00. ISBN 0‐85498‐1 |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 682-682
P. Paufler,
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ISSN:0232-1300
DOI:10.1002/crat.2170260604
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 9. |
Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice‐matched to (001) InP Substrates |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 683-690
V. Gottschalch,
G. Knobloch,
E. Butter,
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摘要:
AbstractThis paper presents the saturation behaviour of In – Ga – As melts with monocrystalline GaAs. The coulometric As‐analysis confirmed that the source‐seed‐technique produces In – Ga – As melts of defined compositions. The growth results of the step cooling technique applying both the source‐seed technique and the single phase mel
ISSN:0232-1300
DOI:10.1002/crat.2170260605
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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| 10. |
On Chemical Kinetics of Silicon Deposition from Silane (V) The Effect of Hydrogen Formation |
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Crystal Research and Technology,
Volume 26,
Issue 6,
1991,
Page 691-700
H. Kühne,
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摘要:
AbstractIn consequence of hydrogen formation during silane pyrolysis total gas volume increases, when the reaction proceeds at constant total pressure. Any mole of silane decomposed produces two moles of hydrogen. In the present paper expressions are derived for 1stand 0.5threaction order describing axial growth rate distribution of the isothermally proceeding reaction for the condition of constant total pressure. Those theoretically expected distributions are compared with results obtained by way of experiment on the one hand and those theoretically expected for the condition of constant gas volume on the other. It is concluded that the experimental results discussed rather agree with constant gas volume than with constant total pressure conditions. So, a compensating increase of total pressure along the tube axis might be supposed.
ISSN:0232-1300
DOI:10.1002/crat.2170260606
出版商:WILEY‐VCH Verlag
年代:1991
数据来源: WILEY
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