摘要:

AbstractIn recent years the importance of selective epitaxy has continuously increased. It is a tool for controlling the production of semiconductor structures as required. This method has been demonstrated and investigated by LPE as well as VPE and MBE.Usually substrates are used having either preferentially etched channels or windows in masks to predetermine the site. In the present paper epitaxy of Pb0.85Sn0.15Te deposits growing in isolated islands on PbTe substrates by means of LPE is investigated.

ISSN:0232-1300    

DOI:10.1002/crat.2170210319

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170210320

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170210321

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170210322

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170210323

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY

ISSN:0232-1300    

DOI:10.1002/crat.2170210324

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY

摘要:

AbstractAgGaSe2thin epitaxial layers onto {100} and {110} oriented GaAs substrates were prepared by flash evaporation technique and investigated by the RHEED method (reflection high energy electron diffraction). Special epitaxial relationships were found and the results will be discussed.

ISSN:0232-1300    

DOI:10.1002/crat.2170210302

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY

摘要:

AbstractTheory of zone recrystallization in the framwork of already known models of normal crystal growth, growth by screw dislocations and by two‐dimensional nucleation is discussed. By mathematical treatment, different from Tillers approach, analytical expressions for supersaturation at the crystallisation interface, for superheating at the dissolution interface, growth rate and some other parameters have been obtained for both cases of normal and screw dislocations growth. It is possible to determine the growth mechanis

ISSN:0232-1300    

DOI:10.1002/crat.2170210303

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY

摘要:

AbstractA model for atom diffusion on surface is proposed, the energy barrier for surface self‐diffusion as well as the barrier for diffusion along surface steps being considered. Using a Monte Carlo method, the equilibrium structure of crystal surface is obtained and its effect on the surface self‐diffusion is studied. The mass transfer surface self‐diffusivity Dsand the mean diffusion distance λ are calculated for different temperatures T. A nonlinear Arrhenius plot (logDvs l/T) is obtained. The maximal deviation from linearity occurs at roughening tempe

ISSN:0232-1300    

DOI:10.1002/crat.2170210304

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY

摘要:

AbstractThe phenomenological plural correlations model permits to attribute to the intermediate phases of the mixture VOMbonding types (bindings) which indicate a low energy of the empirically found structures. In the phases various electron subsystems exist which contain lattice‐like spatial correlations, and when the corresponding cells are in energetically low commensurabilities (in harmonies) to the crystal and to one another then the phase becomes stable. A fundamental assumption of a binding analysis is the electron count being here V1,4,8O0,6,2. As a consequence the phases V8O, V16O3, and V7O4consist of a tetra‐gonally deformed V(B1) partial structure with interstices partly filled by O atoms. The composition of a phase determines the electron concentrations in the subsystems, and these influence the harmony of the correlations in the binding (BFU2 for V16O3, e.g.). In VO, V13O16, V2O3, and V3O5an essentially complete close packed partial structure of O accepts V into its octahedral interstices. Once more harmonies of electron correlations determine favourable bindings (FF'2 for VO e.g.). The Magnéli phases V4O7up to V8O15being shear homeotypes of VO2· h may be considered as homeodesmic to TiO2· r, which is stabilized by a CFU2 binding. From the binding it may be concluded how much Hund insertion is present in a phase. Hund insertion is for instance responsible for the transformation VO2· h → r. The phases V6O13, V4O9and V3O7are homeotypic to V2O5. This last phase permits presumably a UHT3 binding. The results of the binding analysis of VOMshed some new light on the interpretation of properties of the

ISSN:0232-1300    

DOI:10.1002/crat.2170210305

出版商:WILEY‐VCH Verlag    

年代:1986

数据来源: WILEY