Crystal Research and Technology


ISSN: 0232-1300        年代:1986
当前卷期:Volume 21  issue 12     [ 查看所有卷期 ]

年代:1986
 
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     Volume 21  issue 12
1. Autodoping of Epitaxial Silicon Layers (III). Theoretical Treatment of Lateral Autodoping
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1495-1502

H. Kühne,  

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2. Liquid Phase Epitaxy of SiC in the System SiTbSiC by Temperature Gradient Zone Melting (I). Investigation of Solubilities in the System SiTbSiC
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1503-1507

Yu. M. Tairov,   N. S. Peev,   N. A. Smirnova,   A. A. Kalnin,  

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3. J. F. Nye. Physical Properties of Crystals. Clarendon Press — Oxford. First published in paperback with corrections and new material 1985. XVII + 329 p. £ 15.00. ISBN 0‐19‐851165‐5
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1508-1508

P. Paufler,  

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4. Liquid Phase Epitaxy of SiC in the System TbSiSiC by Temperature Gradient Zone Melting (II). Liquid Phase Epitaxy of SiC from TbSi Solvent
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1509-1515

N. S. Peev,   Yu. M. Tairov,   N. A. Smirnova,   A. A. Kalnin,  

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5. Dietrich Seibt, N. Szyperski, U. Hasenkamp (Herausgeber). Angewandte Informatik. Verlag F. Vieweg und Sohn, Braunsehweig, Wiesbaden, 1985, 412 Seiten, DM 89,00, ISBN 3‐528‐03603‐6
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1516-1516

K.‐H. Bachmann,  

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6. Distribution of Cations and the Proton Location in Kaersutite
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1517-1519

Z. Jirák,   F. Pechar,   S. Vratislav,  

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7. Dan Mc Lachlan Jr., Jenny P. Glusker (eds.). Crystallography in North America. American Crystallographic Association. New York 1983. Second Printing 1985. Pp. XII + 479. Price US $ 50.00. ISBN‐0‐937140‐07‐4
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1520-1520

P. Paufler,  

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8. Structure of the OD‐disordered 2‐Hydroxy‐4‐methoxy‐2H‐1,4‐benzoxazin‐3‐one, C9H9NO4
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1521-1529

L. Kutschabsky,   R.‐G. Kretschmer,   H. Schrauber,   W. Dathe,   G. Schneider,  

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9. Konrad Kreher. Elektronen und Phononen in Halbleitern und Isolatoren. Akademie‐Verlag Berlin, 1986, 176 Seiten, 105 Abbildungen, 8 Tabellen (WTB, Band 291), Preis 12.50 M
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1530-1530

P. Süptitz,  

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10. Investigation of the Crystalline State of Identical Sample Domains by Means of Divergent X‐ray Beam Technique in the Direction of Transmission and Reflection in the Scanning Electron Microscope (SEM)
  Crystal Research and Technology,   Volume  21,   Issue  12,   1986,   Page  1531-1539

Siegfried Däbritz,   Herwig R. Horn,   Karlheinz Kleinstück,   Hanns Waltinger,   Volker Hoffmann,  

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