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1. |
Autodoping of Epitaxial Silicon Layers (III). Theoretical Treatment of Lateral Autodoping |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1495-1502
H. Kühne,
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摘要:
AbstractSolving dopants from the silicon surface into the volume during epitaxial layer growth is commonly described as a solution equilibrium, which forms an essential part of modelling intentional silicon doping. Above buried layers a so‐called redistribution autodoping causes the inversely directed process within an initial layer growth period. When the layer begins to grow, the dopants are not totally buried by the silicon deposited, but are partially swept towards the surface to develop the redistribution equilibrium. Above that part of the layer surface located above buried layers, simultaneously a certain dopant partial pressure is established. It gives rise to a vertical and lateral dopant transport by means of gas diffusion. The flow in lateral direction is considered the source of lateral autodoping. In the present paper a theoretical model of autodoping is developed and the layer deposition parameters are discussed with regard to minimizing autodoping effect
ISSN:0232-1300
DOI:10.1002/crat.2170211202
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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2. |
Liquid Phase Epitaxy of SiC in the System SiTbSiC by Temperature Gradient Zone Melting (I). Investigation of Solubilities in the System SiTbSiC |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1503-1507
Yu. M. Tairov,
N. S. Peev,
N. A. Smirnova,
A. A. Kalnin,
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摘要:
AbstractIn the paper which is divided into three parts the liquid phase epitaxy of SiC by temperature gradient zone melting with the solvent SiTb is discussed. In the first part the solubility of SiC at different initial compositions of the SiTb solvent is studied in the temperature range 2000–2
ISSN:0232-1300
DOI:10.1002/crat.2170211203
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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3. |
J. F. Nye. Physical Properties of Crystals. Clarendon Press — Oxford. First published in paperback with corrections and new material 1985. XVII + 329 p. £ 15.00. ISBN 0‐19‐851165‐5 |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1508-1508
P. Paufler,
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ISSN:0232-1300
DOI:10.1002/crat.2170211204
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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4. |
Liquid Phase Epitaxy of SiC in the System TbSiSiC by Temperature Gradient Zone Melting (II). Liquid Phase Epitaxy of SiC from TbSi Solvent |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1509-1515
N. S. Peev,
Yu. M. Tairov,
N. A. Smirnova,
A. A. Kalnin,
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PDF (366KB)
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摘要:
AbstractThe liquid phase epitaxy of SiC by the gradient temperature zone melting in the SiTb solvent is studied. A new variant of this growth method is presented. The comparison of the new variant with the previous one shows that the new variant allows for epitaxial layers with significant better electrophysical properties. It is easier and can be carried out at lower temperatur
ISSN:0232-1300
DOI:10.1002/crat.2170211205
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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5. |
Dietrich Seibt, N. Szyperski, U. Hasenkamp (Herausgeber). Angewandte Informatik. Verlag F. Vieweg und Sohn, Braunsehweig, Wiesbaden, 1985, 412 Seiten, DM 89,00, ISBN 3‐528‐03603‐6 |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1516-1516
K.‐H. Bachmann,
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ISSN:0232-1300
DOI:10.1002/crat.2170211206
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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6. |
Distribution of Cations and the Proton Location in Kaersutite |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1517-1519
Z. Jirák,
F. Pechar,
S. Vratislav,
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摘要:
AbstractThe crystal of Kaersutite, (Na0.63K0.37Ca1.99) (Mg3.10Fe0.98Al0.51Mn0.01Ti055) (Si6.07Al1.93) (O, OH)24from lecality Vlčí Hora – Bohemia was studied by powder neutron diffraction.The refinement of the crystal structure within space group C2/m gave cell dimensionsa= 0.9863,b= 1.8040 andc= 0.5306 nm, β = 105° 28′,Z= 2. Protons were found to form bridges between two 03 ioxygens. (This location allows for the existence of proton per f.u. in maximum). The actual population was refined to 0.8. The occupation of the five eation sites was determined as follows: M 1 (0.60 Mg + 0.25 Ti + 0.10 Al + 0.05 Fe), M 2 (0.50 Mg + 0.35 Fe + 0.15 Al), M 3 (0.8 Mg + p.2 Fe), M 4 (Ca) and A
ISSN:0232-1300
DOI:10.1002/crat.2170211207
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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7. |
Dan Mc Lachlan Jr., Jenny P. Glusker (eds.). Crystallography in North America. American Crystallographic Association. New York 1983. Second Printing 1985. Pp. XII + 479. Price US $ 50.00. ISBN‐0‐937140‐07‐4 |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1520-1520
P. Paufler,
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ISSN:0232-1300
DOI:10.1002/crat.2170211208
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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8. |
Structure of the OD‐disordered 2‐Hydroxy‐4‐methoxy‐2H‐1,4‐benzoxazin‐3‐one, C9H9NO4 |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1521-1529
L. Kutschabsky,
R.‐G. Kretschmer,
H. Schrauber,
W. Dathe,
G. Schneider,
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摘要:
AbstractThe X‐ray diagrams of the title compound show pronounced maxima on diffuse streaks parallelc* and unusual extinctions. The intensity distribution is compatible with the assumption of a disordered (OD) structure consisting of one kind of layers. The structure contains ordered domains with the crystal data: monoelinic, space group P 21/a, lattice parametersa= 15.910(5),b= 8.365(4),c= 15.747(5) Å, β = 120.34(6)°,V= 1809 Å3,Z= 8,Mr= 195.1,Dx= 1.432 Mg m−3, μ(MoKα) = 0.36 mm−1, finalR= 0.129 for 859 observed reflections. The asymmetric unit is constituted of two crystallographically independent molecules related by a pseudo glide plane. The crystal used for X‐ray analysis proved
ISSN:0232-1300
DOI:10.1002/crat.2170211209
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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9. |
Konrad Kreher. Elektronen und Phononen in Halbleitern und Isolatoren. Akademie‐Verlag Berlin, 1986, 176 Seiten, 105 Abbildungen, 8 Tabellen (WTB, Band 291), Preis 12.50 M |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1530-1530
P. Süptitz,
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ISSN:0232-1300
DOI:10.1002/crat.2170211210
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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10. |
Investigation of the Crystalline State of Identical Sample Domains by Means of Divergent X‐ray Beam Technique in the Direction of Transmission and Reflection in the Scanning Electron Microscope (SEM) |
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Crystal Research and Technology,
Volume 21,
Issue 12,
1986,
Page 1531-1539
Siegfried Däbritz,
Herwig R. Horn,
Karlheinz Kleinstück,
Hanns Waltinger,
Volker Hoffmann,
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摘要:
AbstractA supplementary device to a scanning electron microscope allows the simultaneous taking of wide‐angle interferences in the directions of transmission and back reflection of identical specimen areas. A developed computer program simulates the complete reflex system so that the identity with the pattern is obtained. This results, on the one hand, in qualitative and quantitative statements concerning the real structure of the specimen and, on the other hand, shadings of reflexes caused by the target holder tube can be distinguished from interruptions of reflexes caused by the grain size effects. The efficiency of the supplementary device for the characterizing of mono‐ and polycrystalline specimens is demonstrated by several examp
ISSN:0232-1300
DOI:10.1002/crat.2170211211
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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