| 1. |
Photo‐induced effect on the rectification behaviour of Al/Al2O3/InTe/Bi sandwich structures |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 133-135
Roughieh Rousina,
G. K. Shivakumar,
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ISSN:0232-1300
DOI:10.1002/crat.2170230928
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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| 2. |
Effect of temperature on the rectification behaviour of Al/Al2O3/InTe/Bi sandwich structures |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 137-138
Roughieh Rousina,
G. K. Shivakumar,
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ISSN:0232-1300
DOI:10.1002/crat.2170230929
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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| 3. |
X‐ray, electron microscopic studies, and electrical resistivity behaviour in rapidly solidified FeTi2 |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 139-142
P. Mandal,
A. K. Singh,
O. N. Srivastava,
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ISSN:0232-1300
DOI:10.1002/crat.2170230930
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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| 4. |
Infrared absorption spectra of Ba1−xCdxC2O4· 2.5 H2O |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 143-147
S. M. Dharmaprakash,
P. Mohan Rao,
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ISSN:0232-1300
DOI:10.1002/crat.2170230931
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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| 5. |
Elastic constants C11and C44of Ba‐doped KCl crystals |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 149-151
D. Linga Reddy,
M. Suryanarayana,
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ISSN:0232-1300
DOI:10.1002/crat.2170230932
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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| 6. |
On the morphological instability of the growing crystals (III). Micro‐interferometric investigations of the morphological stability of KDP crystals growing from aqueous solutions |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 1061-1071
M. Staynova,
Chr. Nanev,
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摘要:
AbstractThe paper is aimed at the elucidation of the limits to which the faceted forms of KDP crystals preserve their stability and beyond which a skeletal growth from stagnant solutions takes place. In order to avoid the natural convections the experiments were performed in two‐dimensional cells. On the basis of quantitative criteria, it has been shown that the kinetic regime of growth has been replaced by a diffusion one when the concentration on the crystal surface drops with respect to the bulk value with 0.1% to 0.2%. The critical size above which the KDP crystal no longer retains its polyhedral growth mode in a diffusion regime since a gross morphological defect in the form of a depression appears on its (010) face has been compared with the theoretical expressions derived by Cahn and Cherno
ISSN:0232-1300
DOI:10.1002/crat.2170230902
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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| 7. |
A. G. Cullis, P. D. Augustus (eds). Microscopy of semiconducting materials, 1987. Institute of Physics conference series, no. 87. Proc. of the Institute of Physics Conf., Oxford University, 6–8 April 1987. Institute of Physics, Bristol and Philadelphia, 1987, 802 + XVI Seiten, zahlreiche Abbildungen und Tabellen, Autoren‐ und Sachwortverzeichnis, Preis: £ 50.00, ISBN 0‐85498‐178‐0 |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 1072-1072
B. Schumann,
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ISSN:0232-1300
DOI:10.1002/crat.2170230903
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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| 8. |
Interferential method for determining the inclination angle of molecules in plane‐parallel liquid crystalline layers |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 1073-1083
T. Opara,
J. W. Baran,
J. Żmija,
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摘要:
AbstractThe interferential method is presented for determining the inclination angle θ of molecules in homogeneously ordered plane‐parallel liquid crystalline layers. The essence of the method is the analysis of the changes in the layer transmission caused by the change in conditions of interference. The angle θ is calculated from the exact, explicit relation where from no limitations the size of the angle results. The measuring‐stand is described that enabled the method to be put into practice. The results for the PCB layer are presented by way of ex
ISSN:0232-1300
DOI:10.1002/crat.2170230904
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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| 9. |
D. M. Finlayson (ed.). Localization and interaction in disordered metals and doped semiconductors. Proc. 31st Scottish Universities Summer School in Physics. Edinburgh University Press and Redwood Burn Ltd, Trowbridge, 1986; XV, 393 pages, 202 figures, 5 tables, ISBN 0‐905945‐14‐X |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 1084-1084
H. Eschrig,
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ISSN:0232-1300
DOI:10.1002/crat.2170230905
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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| 10. |
Anisotropic plasma etching of P‐doped poly‐Si with CCl4/He |
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Crystal Research and Technology,
Volume 23,
Issue 9,
1988,
Page 1085-1091
R. Handke,
R. Krzikalla,
Gud. Lippert,
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摘要:
AbstractAn anisotropic and very selective etch process for high P‐doped polycrystalline Si has been developed using statistical methods for experimental design and analysis. Mixtures of CCl4and He served as etching gas system. It is shown that only a low number of trials is needed to get good information about the process. One example is presented for the generation of a regression polynom and a computer graphi
ISSN:0232-1300
DOI:10.1002/crat.2170230906
出版商:WILEY‐VCH Verlag
年代:1988
数据来源: WILEY
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