| 1. |
Dislocation Arrangements in Nickel Single Crystals Fatigued at Low Temperatures |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 135-138
K. Mecke,
J. Bretschneider,
C. Holste,
W. Kleinert,
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ISSN:0232-1300
DOI:10.1002/crat.2170210829
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 2. |
Electrically Activated Dislocation Motion in Anhydrous Diglycine Sulfate Single Crystals |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 139-141
G. R. Pandya,
D. D. Vyas,
C. F. Desai,
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ISSN:0232-1300
DOI:10.1002/crat.2170210830
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 3. |
Polymorphism of the Binary Mixture of Sitosteryl Chloride and Cholesteryl Laurate |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 142-145
C. Plosceanu,
M. Socaciu,
I. Cuculescu,
A. Dragomir,
O. Savin,
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ISSN:0232-1300
DOI:10.1002/crat.2170210831
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 4. |
Liquid‐Phase Epitaxy on Channeled (100) GaAs Substrates |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 146-148
G. Kühn,
M. Lux,
E. Nowak,
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ISSN:0232-1300
DOI:10.1002/crat.2170210832
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 5. |
Induced Recrystallization of Initially Grown Crystals in a CuZr Amorphous Alloy by Electron and Laser Beam Irradiation |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 149-151
G. A. Stergioudis,
P. J. Rentzeperis,
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ISSN:0232-1300
DOI:10.1002/crat.2170210833
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 6. |
On the Size‐Shape Relation of Guinier‐Preston Zones Grown in an Al‐12 at.% Zn Alloy at Room Temperature |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 152-155
G. Hübner,
H. Löffler,
G. Wendrock,
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ISSN:0232-1300
DOI:10.1002/crat.2170210834
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 7. |
Physical Properties of Trigonal LiNaSO4 |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 156-158
Wang Jiyang,
S. Haussühl,
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ISSN:0232-1300
DOI:10.1002/crat.2170210835
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 8. |
Growth Mechanism in Atomic Layer Epitaxy (II). A Model of the Growth Process of CdTe on CdTe (111) Substrates |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 969-974
M. A. Herman,
O. Jylhä,
M. Pessa,
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摘要:
AbstractA realistic model of CdTe growth by atomic layer epitaxy (ALE) has been proposed. This model is based on experimental studies concerning the isothermal re‐evaporation rates of elemental Cd and Te deposits on the (lll)A and (lll)B surfaces of CdTe substrates, on a study of surface morphology and crystal structure of CdTe single crystal overlayers grown by ALE on CdTe(lll)B substrates under various crystallization conditions as well as on the existing theories related to the interaction of thermally activated atoms or molecules with hot solid surfaces.This model includes: (i) an existence of transition layers of both Cd and Te2species, intermediate between a chemisorbed and a bulk‐like film, which create reaction zones 3–4 monolayers thick near the substrate surface, and (ii) partial re‐evaporation of the first, chemisorbed monolayer of the deposited constituent e
ISSN:0232-1300
DOI:10.1002/crat.2170210802
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 9. |
Electrochemical Deposition of CdTe Layers. Their Structure and Electrical Properties |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 975-981
V. Valvoda,
J. Toušková,
D. Kindl,
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摘要:
AbstractCdTe layers have been deposited catodically on nickel substrates from an aqueous solution of CdSO4and TeO2. The degree of erystallinity increases with increasing temperature and decreasing deposition potential. The structure of the layers is cubic with 〈111〉 or 〈110〉 texture which is determined by TeO2concentration predominantly. Amorphous phase is found in deposits prepared at higher deposition potential or at lower temperatures of bath (60 °C). After annealing at 200 °C the amorphous deposits crystallized and pure tellurium appeared in diffraction spectra. The resistivity of the films was determined by means ofI—Vcharacteristics. Films with deposition potentials (−500 to −400) mV vs SCE are p‐type conductivity whereas at lower potentials (down to − 700 mV vs. SCE) the n‐ty
ISSN:0232-1300
DOI:10.1002/crat.2170210803
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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| 10. |
T. S. Yen, J. A. Pase (Edit.), Microstructure and Properties of Ceramic Materials. Proceedings of the First China‐US Seminar. Science Press, Beijing, China; North Holland Physics Publishing, Amsterdam 1984, 525 pp, US $ 79.75/Dfl. 215.00, ISBN 0‐411‐86930‐1 |
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Crystal Research and Technology,
Volume 21,
Issue 8,
1986,
Page 982-982
D. Schulze,
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ISSN:0232-1300
DOI:10.1002/crat.2170210804
出版商:WILEY‐VCH Verlag
年代:1986
数据来源: WILEY
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