| 1. |
Growth of the Nonlinear Optical Organic Crystal MMONS (3‐methyl–4‐methoxy‐4′‐nitrostilbene) from the Melt |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 27-31
S. K. Pan,
N. Lei,
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ISSN:0232-1300
DOI:10.1002/crat.2170300328
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 2. |
Electrooptical Behaviour of Aerosil in a Two‐frequency Addressing Mixture |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 32-36
O. Yaroshchuk,
A. Glushchenko,
H. Kresse,
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ISSN:0232-1300
DOI:10.1002/crat.2170300329
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 3. |
Debye‐Waller Factors in NaxC60 |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 37-39
N. Srinivasan,
A. Saravanan,
S. Israel,
S. K. Mohanlal,
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ISSN:0232-1300
DOI:10.1002/crat.2170300330
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 4. |
Crystal Growth of Lanthanum Beryllium Hexaaluminate LaBeAl11O19and Fields of Crystallization in the System La2O3–BeO–Al2O3 |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 295-297
Alexandr I. Alimpiev,
Valeri S. Gulev,
Pavel W. Mokruchniko,
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摘要:
AbstractThe fields of crystallization in the system La2O3–BeO–Al2O3are investigated. Single crystals of LaBeAl11O19were grown by the Czochralski techni
ISSN:0232-1300
DOI:10.1002/crat.2170300302
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 5. |
S. Horiuchi. Fundamentals of High‐Resolution Transmission Electron Microscopy. North Holland; Amsterdam; London; New York; Tokyo 1994, 342 pages, 212 figures, 12 tables ISBN 0‐444–88744–X, Preis: Dfl, 375,00, US $ 214.25 |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 298-298
J. Heydenreich,
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ISSN:0232-1300
DOI:10.1002/crat.2170300303
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 6. |
Growth and Characterisation of Gel‐grown Lead(II)Chloride and Lead(II)Bromide Single Crystals |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 299-306
P. Sagayaraj,
S. Sivanesan,
R. Gobinathan,
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摘要:
AbstractSingle crystals of pure and doped lead(II)chloride and lead(II)bromide were grown by gel technique employing a modified two‐stage chemical reaction. Methods to minimise the predomination of needle morphology during the growth of these crystals have been investigated and the results are discussed. The grown crystals were characterised by optical transmission spectrum. Undoped and monovalent cation (K+, Na+, Cu+, Ag+and Hg+) doped crystals of PbCl2and PbBr2were subjected to d.c. electrical conductivity studies. Using the logσTversusT−1plot, the activation energies for the migration of anion vacancies in lead(II)halides are calculated. They are found to be less for the doped crystals than those of undoped
ISSN:0232-1300
DOI:10.1002/crat.2170300304
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 7. |
Growth and Kinetic Measurements of Triglycine Sulphate Crystals |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 307-315
H. V. Alexandru,
C. Berbecaru,
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摘要:
AbstractSynthesis and two‐step recrystallisation have been used to produce TGS basic substance. Kinetic measurements have been performed for (110)‐type face on a large scale of supersaturations up to about 3%. Evidences of impurity influence for small supersaturation and the “coverage” effect has been es
ISSN:0232-1300
DOI:10.1002/crat.2170300305
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 8. |
E. Prince. Mathematical Techniques in Crystallography and Materials Science. Springer‐Verlag Berlin, 2nd Edition.XI + 223 S., 30 Fig. ISBN 3–540–58115–4. Preis geb. DM 128,– |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 316-316
P. Paufler,
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ISSN:0232-1300
DOI:10.1002/crat.2170300306
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 9. |
Deposition Efficiency Reducing Reactions in Silicon Deposition from Silane at Low Pressure |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 317-328
H. Kühne,
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摘要:
AbstractSilane pyrolysis at polysilicon low‐pressure‐deposition conditions is analyzed along the reactor‐tube axis with respect to the existence of competing decomposition reactions leading to the formation of silicon‐containing gaseous byproducts. The presence of such a parallel reaction is indicated by a difference between silane decomposition efficiency ηSiH4and silicon deposition efficiency ηsi. The rate of such a competing parallel reaction is influenced by the variation of deposition temperature and/or substrate area of silicon deposition. It is drastically accellerated by the presence of phosphine in the gas phase. For the latter case the competing parallel reaction is shown to occur as a homogeneous
ISSN:0232-1300
DOI:10.1002/crat.2170300307
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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| 10. |
Oxygen‐Tantalum Interaction in Niobium |
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Crystal Research and Technology,
Volume 30,
Issue 3,
1995,
Page 329-332
Yu. L. Pozdeev‐Freeman,
M. N. Naboka,
V. V. Starikov,
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摘要:
AbstractThis article deals with results of the investigation of oxygen dissolution in niobium foil containing tantalum impurity. Experimental data show spatial separation of oxygen and tantalum in niobium if the oxygen concentration is near to the oxygen solibility limit in niobium at room temperature. Tantalum atoms move to the foil surface, and there is more oxygen in the foil volume than near the foil surface. Enrichment of niobium foil surface by tantalum influences strongly the oxygen diffusion across the foil and foil surface ability to electron injection.
ISSN:0232-1300
DOI:10.1002/crat.2170300308
出版商:WILEY‐VCH Verlag
年代:1995
数据来源: WILEY
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