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| 1. |
Nucleation and growth of some solution‐grown crystals in gel media: Visualization by interferometric holography |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1541-1547
F. Lefaucheux,
M. C. Robert,
Y. Bernard,
S. Gits,
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摘要:
AbstractHolographic interferometry has been applied to the study of mass transfer induced by nucleation and growth in gel media. Real time obsrvations were made on growth of insoluble (CaHPO4, 2 H2O) and soluble (KDP) materials.
ISSN:0232-1300
DOI:10.1002/crat.2170191202
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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| 2. |
Dislocations in solids, Vol. 6. Applications and recent advances north‐Holland Publ. Co. Amsterdam‐New York‐Oxford, 1983, mit 557 Seiten und 279 Abbildungen, Preis: Dfl. 245.– |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1548-1548
F. R. N. Nabarro,
P. Paufler,
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ISSN:0232-1300
DOI:10.1002/crat.2170191203
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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| 3. |
Crystal growth of fatty acids from melt: CH3(CH2)14COOH and CH3(CH2)16COOH |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1549-1552
P. B. V. Prasad,
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摘要:
AbstractCrystalllization of palmitic acid and stearic acid from melt, held between glass plates, is discussed.
ISSN:0232-1300
DOI:10.1002/crat.2170191204
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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| 4. |
Growth and morphology of the CuGaS2, CuAlSe2, CuGaSe2and CuInS2ternary compounds |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1553-1557
I. V. Bodnar,
I. T. Bodnar,
A. A. Vaipolin,
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摘要:
AbstractMonocrystals of the ternary compounds CuGaS2, CuAlSe2, CuGaSe2, and CuInS2were grown from their elements by transport reactions; their cell parameters and melting temperature were determined. The character of the phase transition in these compounds was found out and also the boundary conditions of growing the monocrystals as well as their dislocation structure (by etching).
ISSN:0232-1300
DOI:10.1002/crat.2170191205
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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| 5. |
Molecular beam epitaxy of III—V compounds — A comprehensive bibliography 1958–1983. Springer‐Verlag, Berlin, Heidelberg, New York, Tokyo 1984, 222 Seiten Preis: broschürt DM 48, –. ISBN 3‐540‐13177‐9 |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1558-1558
K. Ploog,
K. Graf,
H. Berger,
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ISSN:0232-1300
DOI:10.1002/crat.2170191207
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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| 6. |
On the distribution coefficient of sulphur during the crystallization of GaP from nonstoichiometric gallium melts |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1559-1564
H. Koi,
K. Hein,
W. Siegel,
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摘要:
AbstractGaP grown by the SSD technique was doped by sulphur in a wide concentration range. Using chemical, electrical and radiochemical methods the concentration and temperature dependence of the distribution coefficientkduring this crystallization from the nonstoichiometric melt was determined. With the crystallization temperature at 1000°C forka value 6.9 ± 1.4 was found independent on the sulphur quantity added. The distribution coefficient decreases clearly with increasing temperatur
ISSN:0232-1300
DOI:10.1002/crat.2170191208
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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| 7. |
The morphology of witherite and strontianite grown in Silica Gel, by slow precipitation and on hydrothermal conditions |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1565-1569
W. Franke,
A. Hofer,
B. Jelinski,
K. Lenk,
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摘要:
AbstractBoth the gel method, slow precipitation, hydrogen carbonate transport at room temperature as well as hydrothermal transport in a carbon dioxide solution and the hydrothermal decomposition of the oxalates were used to grow BaCO3and SrCO3. The morphology of the resulting crystals is described and compared with respect to theoretical considerations including the Donnay‐Harker rule and the PBC theor
ISSN:0232-1300
DOI:10.1002/crat.2170191209
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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| 8. |
Topics in applied physics, vol. 56 the physics of hydrogenated amorphous silicon II electronic and vibrational properties springer‐Verlag Berlin, Heidelberg, New York, Tokyo 1984 360 Seiten, 203 Abbildungen, 10 Tabellen; Preis: DM 118,–, ISBN 3‐540‐12808‐5 |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1570-1570
J. D. Joannopoulos,
G. Lucovsky,
R. Bindemann,
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ISSN:0232-1300
DOI:10.1002/crat.2170191210
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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| 9. |
The morphology of hydrothermally grown epistilbite |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1571-1573
H. Ghobarkar,
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摘要:
AbstractEpistilbite crystals were grown on the surface of an artifical glass by hydrothermal treatment at 1 kb in the range of 250° to 400°C. Laminar twinned crystals were observed at low temperatures, with increasing temperature twinning decreases and the thickness with respect to [010] increase
ISSN:0232-1300
DOI:10.1002/crat.2170191211
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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| 10. |
Semiconductor technologies 1983 Band 8 der Reihe “japan annual reviews in electronics, computers and telecommunications” OHMSHA Ltd. Tokyo und North‐Holland Publ. Co. Amsterdam 1983. 320 Seiten, 4 farbige, über 300 schwarz‐weiße Abbildungen |
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Crystal Research and Technology,
Volume 19,
Issue 12,
1984,
Page 1574-1574
K. Unger,
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ISSN:0232-1300
DOI:10.1002/crat.2170191212
出版商:WILEY‐VCH Verlag
年代:1984
数据来源: WILEY
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