摘要:

Interaction between Ti/Al and Ti/AlSi layered structures is studied by the resistivity measurements. The change in the resistivity of the structure is correlated to the rate of formation of an intermetallic transition metal compound due to interaction between Al and Ti. It is found that the presence of Si inhibits the interaction. As the reaction rate of the intermetallic compound formation is reduced the activation energy increases. The diffusion coefficient of Al in Ti reduces to a value 6.6×10−17from 6×10−14cm2/s and the amount of Ti consumed is reduced by about two orders of magnitude at 450 °C for Ti/AlSi. The results are discussed and implications for multilevel metallization are pointed out.

ISSN:1071-1023    

DOI:10.1116/1.584315

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.584316

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

Insituprocessing methods would permit fabrication of semiconductor devices by simplified methods and without exposure of surfaces to air, liquids, or a processing atmosphere shared with human operators. The principal alternative patterning methods which would replace current lithography in such schemes are reviewed briefly.

ISSN:1071-1023    

DOI:10.1116/1.584318

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

A thin‐film warm‐carrier device, which has a contact area smaller than any other thin‐film antenna coupled device yet conceived, was fabricated by a combination of electron beam lithography and focused ion beam milling. The device exhibited a distinguishing antenna pattern for CO2laser radiation, and the pattern shifted in accordance with the long‐wire antenna theory when the length of the thin‐film antenna was reduced. These results indicate that the device works as an antenna coupled detector for CO2laser radiation.

ISSN:1071-1023    

DOI:10.1116/1.584320

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

A focused gallium scanning ion probe is used, in conjunction with an efficient secondary ion mass spectrometry system, to obtain high lateral resolution mass‐resolved images of specimen surfaces. The Ga+beam, extracted from a liquid metal ion source, is accelerated to 40 keV and focused to a spot with a minimum diameter of ∼20 nm (ultimate resolution). The secondary ion handling system is briefly discussed; the secondary ion detection efficiency is 0.2%. Applications relevant to integrated circuit inspection and evaluation are presented, including high signal statistics elemental images of the metallizations and substrate of submicrometer devices, and examples of the detection of circuit flaws.

ISSN:1071-1023    

DOI:10.1116/1.584321

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

In order to apply secondary ion mass spectrometry (SIMS) to quantitative analysis of submicron areas, we made a high‐spatial resolution SIMS (submicron SIMS) by combining a focused metal ion beam, a plane‐focusing mass spectrometer, and a multichannel parallel detection system. A 35 kV, 100 pA beam with diameter on the sample of<0.1 μm was used. During measurements, this high‐current density ion beam can destroy the sample with a large sputtering rate when slowly rastered. This causes rapid changes in both absolute and relative intensities of secondary ions. In our system, a 120‐channel parallel detector covers the 1:2 mass range ofm/edispersion. By using this submicron SIMS, quantitative factors in the analysis of microstructures on the surface were investigated. Sputtering yield and, consequently, secondary ion intensity depend largely upon the angle between the primary beam and the sample surface just under the beam irradiation; such topographic effects distort the quantitative results. In order to avoid such distortions, it was found to be advantageous to shave off the analyzed feature from one edge to the other. By using such a sputtering method, the incident angle of the primary beam to the surface being sputtered is held constant. Accordingly, the quantitative power of submicron SIMS was greatly improved.

ISSN:1071-1023    

DOI:10.1116/1.584322

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

A theoretical model on the generation of a singly charged ion in a liquid metal ion source is proposed based on field evaporation, free space field ionization (FI), and charge transfer collision (CT) with neutral atoms. Calculated results for Ga+from a Ga source show that the FI peak appears at an energy deficit of ∼9 eV for an emitter radius of 1 nm and an electric field of 16 V/nm, that a calculated ion flux for the FI is about five times as large as for the CT collision between Ga+and Ga, and that an energy distribution curve for the CT exponentially decreases with a decay factor expressed by the product of the emitter radius and the electric field. These are in good agreement with the energy distribution curves of Ga+experimentally obtained. This model is also applied to the energy distributions for the singly charged ions from Au60Si26Be14(at. %) alloy source in which tails in the high ion energy region appear due to the CT collision between the doubly charged ions and the atoms, in addition to the low energy tail. It is shown theoretically and experimentally that both tails also exponentially decrease. The intensity ratio between the high‐ and low‐energy tails indicates that the ions in the low‐energy tail are mainly produced by the CT collision between the doubly charged ions and the atoms.

ISSN:1071-1023    

DOI:10.1116/1.584324

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

Liquid metal ion sources (LMIS’s) of gallium operating at 300 K and at currents down to 1 nA have been investigated. The mechanism of operation of the LMIS at low currents is believed to be that of the usual Taylor cone mode. Values of the full width at half‐maximum of the energy spread, in the very low current range, 3 nA–1 μA, at 300 K did not decline below 4.5 eV as the emission current was reduced. Angular intensity measurements were also obtained in the emission current range.

ISSN:1071-1023    

DOI:10.1116/1.584325

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

The variety of ion species is increased by using alloys as well as pure elements as the source material of liquid‐metal‐ion sources (LMIS’s) in focused‐ion‐beam (FIB) technology. Some experiments show that the base elements of the alloy affect the charge and energy distributions of emitted ions. Doubly charged ions, which have a narrower energy spread per charge and smaller energy tail than the singly charged ions, form a finer FIB. The intensity ratio of doubly to singly charged ions is expected to increase with selection of an alloy with higher surface tension, because this will strengthen the electric field at the ion emitting surface. LMIS characteristics in connection with source materials are discussed.

ISSN:1071-1023    

DOI:10.1116/1.584326

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.584327

出版商:American Vacuum Society    

年代:1988

数据来源: AIP