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| 11. |
Summary Abstract: Si incorporation and segregation in Ga1−xAlxAs(100) films grown by molecular beam epitaxy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 519-520
A. Rockett,
J. Klem,
S. A. Barnett,
J. E. Greene,
H. Morkoç,
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PDF (166KB)
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ISSN:1071-1023
DOI:10.1116/1.583414
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 12. |
Summary Abstract: State‐of‐the‐art AlGaAs alloys by antimony doping |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 521-522
T. M. Kerr,
T. D. McLean,
D. I. Westwood,
J. D. Medland,
S. R. Blight,
C. E. C. Wood,
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PDF (169KB)
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ISSN:1071-1023
DOI:10.1116/1.583415
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 13. |
Summary Abstract: Optical properties of AlxGa1−xAs grown by molecular beam epitaxy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 523-524
D. C. Reynolds,
C. W. Litton,
K. K. Bajaj,
P. W. Yu,
Jasprit Singh,
P. J. Pearah,
W. T. Masselink,
T. Henderson,
J. Klem,
H. Morkoç,
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PDF (130KB)
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ISSN:1071-1023
DOI:10.1116/1.583416
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 14. |
Optical properties of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 525-527
P. J. Pearah,
W. T. Masselink,
T. Henderson,
C. K. Peng,
H. Morkoç,
G. D. Sanders,
Yia‐Chung Chang,
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PDF (303KB)
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摘要:
A detailed characterization of the optical properties of GaAs/AlGaAs multiple quantum well heterostructures has been performed at superfluid helium temperatures using photoluminescence, optical transmission, and reflectance techniques yielding complementary information. We present the first report of experimentally determined absolute absorption spectra obtained from optical transmission spectra. Exciton absorption features become strongly enhanced as the wells get narrower. Theoretical calculations of the quantum energy levels correlate well with experimental observations. Reflectance spectra revealing structure of greater detail than that observed in luminescence have permitted the observation of free exciton splitting attributed to submonolayer well width fluctuations.
ISSN:1071-1023
DOI:10.1116/1.583417
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 15. |
Lattice‐mismatched heteroepitaxial interface of GaAsySb1−yon GaAs substrates |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 528-531
H. Cheng,
T. Koyanagi,
A. G. Milnes,
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PDF (357KB)
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摘要:
Specular GaAsySb1‐yfilms with Sb content less than 30% have been grown heteroepitaxially on GaAs buffer layers by controlling the atomic flux ratio of Sb to Ga with the supply of excess arsenic flux to maintain a slight group V stabilized surface condition. The incorporation coefficient of antimony atoms is about 0.5 at a growth temperature of 520 °C. Free carrier concentration profiles of specimens with GaAsySb1‐y/GaAs interfaces measured by electrolyticC–Vprofiling show dips in the interface regions, probably caused by interface energy states within the band gap due to the misfit structure. The total number of missing carriers in the interface region is on the order of 3×1011cm−2and is two orders of magnitude lower than that expected from dangling bond lattice‐mismatch considerations.
ISSN:1071-1023
DOI:10.1116/1.583418
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 16. |
Summary Abstract: GaAs1−ySbygrowth by molecular beam epitaxy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 532-533
T. M. Kerr,
T. D. McLean,
D. I. Westwood,
J. D. Medland,
C. E. C. Wood,
I. J. Murgatroyd,
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PDF (158KB)
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ISSN:1071-1023
DOI:10.1116/1.583419
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 17. |
Summary Abstract: The influence of molecular beam epitaxy growth conditions on the Ga–Al–In–As ternary and quaternary systems |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 534-535
E. G. Scott,
D. A. Andrews,
G. J. Davies,
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PDF (169KB)
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ISSN:1071-1023
DOI:10.1116/1.583420
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 18. |
Summary Abstract: Growth and characterization of an InAs–GaAs superlattice alloy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 539-539
M. C. Tamargo,
R. E. Nahory,
P. Voisin,
M. Voos,
R. Hull,
A. Y. Cho,
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PDF (90KB)
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ISSN:1071-1023
DOI:10.1116/1.583422
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 19. |
Investigation of molecular beam epitaxial In0.53Ga0.47As regrown on liquid phase epitaxial In0.53Ga0.47As/InP |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 540-542
Y. Nashimoto,
S. Dhar,
W. P. Hong,
A. Chin,
P. Berger,
P. K. Bhattacharya,
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PDF (258KB)
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摘要:
Molecular beam epitaxial In0.53Ga0.47As regrown on high‐purity liquid phase epitaxial In0.53Ga0.47As has been investigated. The regrown layers have been characterized by Hall measurements, low‐temperature photoluminescence, and deep level transient spectroscopy. The regrown layers have properties comparable to material directly grown on InP substrates.
ISSN:1071-1023
DOI:10.1116/1.583423
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 20. |
Summary Abstract: Mn redistribution in doped GaInAs |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 543-544
A. S. Brown,
G. W. Wicks,
L. F. Eastman,
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PDF (157KB)
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ISSN:1071-1023
DOI:10.1116/1.583424
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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