摘要:

Silicon oxynitride (SiOxNy) films have been grown by a low‐pressure chemical vapor deposition (LPCVD) process from mixtures of SiH2Cl2, N2O, and NH3at 820 °C. The overall layer composition can be varied by adjusting the N2O/NH3gas flow ratio. Rutherford backscattering and Auger analysis of the films indicated a uniform composition throughout the layer, irrespective of the nature of the substrate. Both the thickness and the composition of these oxynitride films can conveniently be measured with ellipsometry; the oxygen to nitrogen ratio can be derived reliably from the value of the refractive index. It is inferred that LPCVD oxynitrides are homogeneous on an atomic scale, i.e., the silicon atoms are randomly surrounded by oxygen and nitrogen atoms, and are therefore not to be conceived of as a physical two phase mixture of silicon oxide and silicon nitride. Their stability in metal–oxynitride–oxide–silicon structures is found to improve with increasing oxygen content as regards flatband voltage shift upon temperature‐bias stress.

ISSN:1071-1023    

DOI:10.1116/1.582543

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

Thermally oxidized SiO2films on silicon wafers were directly thermally nitrided by heating in an anhydrous ammonia gas ambient. The nitrided film was studied by Auger electron spectroscopy, infrared spectroscopy, and etching rate measurements. It was found by AES measurement that nitrogen permeates through SiO2films even as thick as 1000 Å, if nitrided at 900 to 1100 °C, and that it distributes throughout the film. At the silicon interface, a nitrogen pileup was observed. Results of infrared spectroscopy and etching rate measurements confirmed the AES measurements.

ISSN:1071-1023    

DOI:10.1116/1.582544

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

Front‐emitting InP/InGaAsP LEDs are presently used for optical communications. They operate at 1.3 μm, the wavelength at which dispersion is minimum for silica fibers. In this paper, we discuss the use of an electron‐beam‐deposited Al2O3antireflection coating to increase the coupled power from a 1.3‐μm InP/InGaAsP LED and thereby increase the transmission distance as well. Al2O3is chosen since its index of refraction (n∼1.77) is very close to the optimum value ofn=1.79 for a single layer AR coating on InP at λ=1.3 μm. Additionally, the Al2O3coefficient of thermal expansion (α∼5.6×10−6/K) nearly matches that of InP (α∼4.5×10−6/K). A factor of 1.31 ± 0.08 increase in power, butt‐coupled into an FT3 fiber, was obtained after coating 1.3‐μm InP/InGaAsP LEDs with a 1850‐Å‐thick Al2O3film. Furthermore, the Al2O3coating process is simple and produces AR coatings which compare favorably with optimum hydrogen containing silicon nitride films.

ISSN:1071-1023    

DOI:10.1116/1.582507

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

Residual gas analysis is used to identify chlorofluorocarbon‐based contamination in the process chamber of a roots‐blower‐evacuated plasma etch system. The contamination is shown to result from volume migration of the corrosion resistant fluid used in a rotary vane backing pump. Injection of a regulated N2flow between the blower and backing pump effectively eliminates the contamination.

ISSN:1071-1023    

DOI:10.1116/1.582508

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

The cross‐sectional model (CSM) is an experiment designed to test the electrical and technological issues that are representative of a proposed Josephson Signal Processor. This paper describes the thin films aspects of the CSM. The existing Pb‐alloy technology for logic and memory circuits was developed further (for both chips and package parts) to meet the additional demands for the CSM. This included more extensive use of regulator junctions for on‐chip power distribution, more precise target value objectives for current levels on chip, and extension of the thin film technology to new package part structures, including additional thermal and mechanical processing. The vacuum depositions and materials, photolithography, package parts diagnostics, and chip diagnostic aspects of the CSM are described.

ISSN:1071-1023    

DOI:10.1116/1.582509

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

The quantitative understanding of the processes involving focused beams, such as recrystallization of semiconductors or thermal annealing and recording, requires a detailed knowledge of the temperature profiles within the target. We have derived first a normalized analytical representation for the distribution of power dissipation in targets bombarded with electron beams. This representation has then been combined with the Green’s function approach and Kirchoff transformation to predict the steady state and transient temperature profiles in targets with linear and nonlinear thermal conductivities. This calculation for the case of transient heating when thermal conductivity changes with temperature is not strictly accurate and, therefore, a numerical technique was developed involving successive over relaxation. Considerable care was needed in choosing the distribution of mesh size because of the great difference between beam radius (down to 2 μm) and target dimensions (250–500 μm). Numerical calculations for silicon (a nonlinear conductor) agreed well with transient analytical calculations using Kirchoff transformation.

ISSN:1071-1023    

DOI:10.1116/1.582510

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.582530

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.582532

出版商:American Vacuum Society    

年代:1983

数据来源: AIP