摘要:

The effects of photoelectrons and Auger electrons from the x‐ray mask on contrast and resolution were experimentally investigated in the replication of submicron resist patterns in x‐ray lithography. A resist thinner than 550 Å was exposed by electrons generated from a Si–N membrane. The effect of electrons from the Au absorber is observed even with a 1 μm thick Au absorber pattern, because of the continuous radiation spectrum generated, producing wavelengths shorter than those of the characteristic radiation. A polymer film coating on the Au absorber pattern increases the contrast of the mask, because electrons from the x‐ray mask are absorbed by the polymer film. The unwanted exposure of a resist by electrons from a Si wafer was also studied. On the basis of these results, we proposed a new two‐layer resist process. In this way, a submicron resist pattern can easily be realized by using a high contrast mask and a two‐layer resist.

ISSN:1071-1023    

DOI:10.1116/1.582917

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

Fabricating a high contrast and highly accurate gold absorber pattern has been considered for an x‐ray mask. In this method, the polyimide patterns etched by O2‐reactive ion etching are used for the plating mask. In electron beam pattern generation, few electrons are backscattered from the polyimide film. Those from the electroplating base are trapped in the polyimide film, which improves the electron beam resolution. In O2‐reactive ion etching of the polyimide film, an accurate pattern without etch residue is obtained by using the carbon target. The titanium adhesion layer for the plating base is etched off by CBrF3‐reactive ion etching without undercut. A gold pattern with 0.5 μm in width and 1.0 μm in thickness can be obtained within 0.1 μm accuracy by a combination of these technologies.

ISSN:1071-1023    

DOI:10.1116/1.582918

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

The electrochemical behavior of III–V ternary GaxIn1‐xP alloys (with 0≤x≤1) is studied in aqueous and nonaqueous media (sodium iodide liquid ammoniate). The energy position, referenced through an electrochemical scale, of the maximum level of the valence band for each of these compounds is nearly constant. These results still show that this position depends mainly on the anion P, through its electronegativity, in accordance with the so‐called common anion rule found with semiconductor–metal junctions.

ISSN:1071-1023    

DOI:10.1116/1.582920

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

In a novel method for eliminating hillocks in integrated‐circuit metallizations, a sandwich layer is grown between the Al film and the underlying SiO2. This layer must have a thermal expansion coefficient between those of SiO2and Al. The technique is demonstrated with WSi2as the sandwich layer.

ISSN:1071-1023    

DOI:10.1116/1.582921

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

The possibility of using hydrogen as a substitute for halogen gases in dry etching processes is discussed. Etch rates for Si, SiO2, and Si3N4are compared.(AIP)

ISSN:1071-1023    

DOI:10.1116/1.582922

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

Chlorine was used to carry out the reactive ion etching (RIE) of GaAs. At 5 mTorr pressure and 270 V bias, it was found to etch at a rate>1 μ/min, and produced features having vertical sidewalls and a clean substrate surface. The mechanism of chlorine RIE of GaAs was studied by examining etch rates and profiles obtained using gases of different mixtures of chlorine and argon. The results are consonant with proposed mechanisms of GaAs etching by chlorine in both the plasma and reactive ion beam etching regimes.

ISSN:1071-1023    

DOI:10.1116/1.582923

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.582924

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.582925

出版商:American Vacuum Society    

年代:1984

数据来源: AIP