ISSN:1071-1023    

DOI:10.1116/1.583170

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583171

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583172

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

摘要:

Results of Monte Carlo simulations carried out to examine the nature of the growth mechanism in MBE of lattice matched III–V compounds are presented. The role of surface molecular reaction kinetics associated with the dissociative chemisorption of the group V molecular specie is explicitly investigated for the first time and shown to lead to a new configuration‐dependent‐reactive‐incorporation (CDRI) growth process, quite distinct from the conventional notions of nucleation and continuous growth. For very slow dissociative reaction kinetics the CDRI growth process is shown to lead to a reaction‐limited‐incorporation (RLI) growth mechanism and the accompanying growth rate exhibits oscillatory behavior. For fast dissociative reaction kinetics, accompanied with a sufficiently fast surface interlayer migration kinetics of the group III atoms, the CDRI growth process gives rise to a configuration‐limited‐reactive‐incorporation (CLRI) growth mechanism. The crystal growth rate once again exhibits oscillations. It is also shown that under conditions involving specially delicate balance between the various kinetic rates, growth can proceed without oscillations in the growth rate. An essentially layer‐by‐layer mode of material addition is realized in all the aforementioned cases. Consequences of the resulting growth front morphology for the time dependence of the RHEED specular beam intensity are investigated and shown to give rise to a damped oscillatory behavior, including in the absence of oscillations in the crystal growth rate.

ISSN:1071-1023    

DOI:10.1116/1.583173

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583174

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

摘要:

We report the first study of single‐crystalline GaAs grown by molecular beam epitaxy (MBE) on a nonpolar substrate. In this study, GaAs was grown under various conditions on Ge(100). Surface morphologies were specular and quite strongly dependent on surface preparation. Photoluminescence spectra from such GaAs is quite intense and is dominated by donor–acceptor recombination at 1.479 eV which appears to be Ge0Ga−Ge0As. We also observe its phonon replica at 1.442 eV and the recombination of bound excitons at 1.514 eV. This and capacitance–voltage measurements indicate incorporation of Ge from the substrate into the GaAs. Photoluminescence from GaAs/AlGaAs multiple quantum well structures originates from the same processes as in bulk GaAs; in quantum wells, however, the transitions occur at higher energies due to the enhancement of the GaAs band gap. The observed energies are in good agreement with theoretical predictions. We have also studied the growth of GaAs on Si(100) and on Ge films on Si(100).

ISSN:1071-1023    

DOI:10.1116/1.583175

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583176

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583178

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583179

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

摘要:

Oscillations in both the intensity and width of reflection high‐energy electron diffraction beams that are measured during the MBE growth of GaAs are observed to depend upon most growth parameters. The envelope of the intensity oscillations, for example, depends upon the flux ratios, the substrate temperature, the sample misorientation, the scattering geometry, the sample flatness, and the flux uniformity. To separate these dependencies we have made RHEED measurements on small, exceedingly flat, near singular samples. The angular profiles of the specular beam were measured during the first two periods of oscillations. These data were analyzed in terms of the two‐level diffraction calculation of Lent and Cohen. The measured profiles are in excellent agreement with that calculation. For oscillations with a 26‐s period, moderate changes in the substrate temperature and As flux can cause significant changes in the pair correlation length on the surface.

ISSN:1071-1023    

DOI:10.1116/1.583180

出版商:American Vacuum Society    

年代:1985

数据来源: AIP