摘要:

Although scanning probe microscopy is traditionally limited to slow temporal response, techniques utilizing nonlinear tip‐to‐sample interactions can be used to capture very fast temporal signals. We have developed a scanning force microscope probe which makes use of these techniques for measuring ultrafast voltage signals with both picosecond time resolution and nanometer‐scale lateral resolution. Measurements of very large scale integrated and microwave integrated circuits are shown.

ISSN:1071-1023    

DOI:10.1116/1.587855

出版商:American Vacuum Society    

年代:1995

数据来源: AIP

摘要:

The ability to perform noninvasive logic analysis at the internal points of integrated circuits is crucial in the design and test of advanced microelectronics. We present a noncontact scanning probe technique for extracting high‐frequency digital patterns at internal points of an integrated circuit. The digital waveforms are determined by sensing the localized electrostatic force between a small probe and point on the circuit being measured. The force is monitored by detecting the deflection of the probe using a fiber‐optic interferometer. The bandwidth of force measurements made using proximal probes are typically limited by the mechanical frequency response of the probe. In the presented instrument high‐frequency bit‐by‐bit digital pattern measurements are enabled by using a pulse sampled heterodyne technique. In conjunction with a nulling approach, the technique is capable of measurements without complex calibration or probe positioning, and can be performed over passivated structures. A simple procedure is also presented which corrects errors due to nonidealities of the pulse sampling waveform. Using a probe with a kHz resonant frequency, Mbit/s patterns have been measured. Errors due to coupling from adjacent signal lines and due to surface charge effects are examined.

ISSN:1071-1023    

DOI:10.1116/1.587856

出版商:American Vacuum Society    

年代:1995

数据来源: AIP

摘要:

Lithography on (100) single‐crystal silicon and amorphous silicon is performed by electric‐field‐enhanced local oxidation of silicon using an atomic force microscope (AFM). Amorphous silicon is used as a negative resist to pattern silicon oxide, silicon nitride, and selected metals. Amorphous silicon is used in conjunction with chromium to create a robust etch mask, and with titanium to create a positive AFM resist. All lithographies presented here were patterned in parallel by arrays of two piezoresistive silicon or two silicon‐nitride cantilevers. Parallel arrays of five piezoresistive cantilevers were fabricated and used in imaging and lithographic applications. A 400 μm×100 μm parallel image is obtained in the time it would normally take to obtain a 100 μm×100 μm image. In our method of parallel operation, it is only possible to image and lithograph in modes that do not require feedback. In imaging, this limits the possible applications of the parallel AFM. During parallel lithography, discrepancies are seen between the tip in the feedback loop and those that are not. To overcome these differences it will be necessary to devise a system where each of the tips in the array are controlled by individual feedback loops.

ISSN:1071-1023    

DOI:10.1116/1.587857

出版商:American Vacuum Society    

年代:1995

数据来源: AIP