|
|
| 111. |
Effect of barrier thickness asymmetries on the electrical characteristics of AlAs/GaAs double barrier resonant tunneling diodes |
| |
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 10,
Issue 2,
1992,
Page 1042-1044
A. J. Tsao,
V. K. Reddy,
D. R. Miller,
K. K. Gullapalli,
D. P. Neikirk,
Preview
|
PDF (243KB)
|
|
摘要:
We report the impact of small barrier thickness asymmetry on the dcI–Vcharacteristics of AlAs/GaAs double barrier resonant tunneling diodes. With a bottom AlAs barrier 6 ML thick and GaAs well 18 ML thick, the effects of varying the top AlAs barrier thickness from 5 to 8 ML produced significant changes in peak current density, peak voltage, and peak‐to‐valley current ratio (PVCR). PVCRs of 5.6 were obtained on a 7/18/6 monolayer structure, the highest reported to date for an AlAs/GaAs DBRTD structure.
ISSN:1071-1023
DOI:10.1116/1.586410
出版商:American Vacuum Society
年代:1992
数据来源: AIP
|
| 112. |
Influence of growth interruption onI–Vcharacteristics of AlAs/GaAs double barrier resonant tunneling diodes |
| |
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 10,
Issue 2,
1992,
Page 1045-1047
V. K. Reddy,
D. P. Neikirk,
Preview
|
PDF (304KB)
|
|
摘要:
We have examined the influence of growth interruption on the electrical characteristics of thin barrier, high‐current density AlAs/GaAs resonant tunneling diodes (RTDs) grown by molecular‐beam epitaxy. Interrupt schedules were determined by independent reflection high‐energy electron diffraction measurements of specular spot intensity oscillations during prototypical device growth sequences. Our data suggests that interface roughness at inverted and normal interfaces does not play a significant role in determining the perpendicular transport characteristics of high current density AlAs/GaAs RTDs.
ISSN:1071-1023
DOI:10.1116/1.586411
出版商:American Vacuum Society
年代:1992
数据来源: AIP
|
| 113. |
The influence of InAs well thickness on the negative differential resistance behaviors in GaSb/AlSb/InAs/GaSb/AlSb/InAs double barrier structures |
| |
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 10,
Issue 2,
1992,
Page 1048-1050
M. P. Houng,
Y. H. Wang,
C. L. Shen,
M. H. Liu,
J. F. Chen,
A. Y. Cho,
Preview
|
PDF (308KB)
|
|
摘要:
The peak‐to‐valley current ratio can be improved by adding a thin InAs layer in the well region of the GaSb/AlSb/GaSb/AlSb/InAs resonant interband tunneling structure. It is found that the ratio rises to more than 20 at room temperature for an InAs layer reaching 30 Å. Increasing the InAs layer beyond 30 Å the ratio gradually goes down. However, we also find as the added InAs layer is further increased to 240 Å, theI–Vcharacteristics change from single negative differential resistance (NDR) to multiple NDR behavior. Such interesting phenomena can be modeled theoretically due to the coupling effect of the electrons from the added InAs layer and the light holes from the GaSb layer in the well region.
ISSN:1071-1023
DOI:10.1116/1.586412
出版商:American Vacuum Society
年代:1992
数据来源: AIP
|
|
首页
