摘要:

A wide range energy focused ion beam system with post objective lens retarding and accelerating field optics has been developed. This system employs two objective lens elements in tandem. The first objective lens element (OL1) is a conventional einzel lens, the second one (OL2) is a retarding and accelerating mode immersion lens. The post objective lens retarding optics is very effective to obtain a low energy fine focused beam. While the post objective lens acceleration optics is not optically attractive, it has other merits. A very high energy ion beam, more than 100 keV, can be obtained by relatively small apparatus. It is also possible to change the landing energy without adjustments of ion beam alignment. The optimized deflector system has been designed for the above mentioned optics. Stitching accuracies of the system were evaluated, and the measured stitching errors are 0.115 μm (2δ) on theXaxis and 0.088 μm (2δ) on theYaxis.

ISSN:1071-1023    

DOI:10.1116/1.590195

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

The current status of single ion implantation (SII) which has been proposed as a novel technology to suppress the fluctuation in dopant number in fine semiconductor structures is reported. The key to control the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. By improving the SE detection system, we have achieved the efficiency of 90% which ensures the reduction in the fluctuation of dopant number to 30% compared to the conventional ion implantation. The improvement for the better SE detection efficiency has turned out to also be effective for the precise beam alignment. The single ion incident position can now be successfully controlled with an error of less than 0.3 μm.

ISSN:1071-1023    

DOI:10.1116/1.590196

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

Improvements in focused ion beam (FIB) material removal rates utilizing geometric and chemical enhancement were investigated. Geometrical optimization of FIB micromachining of Permalloy and diamond was investigated to determine the magnitude of material removal rate gains that could be attained by increasing the angle of the ion beam with respect to the sample surface normal. The combination of geometrical optimization with chemical enhancement(C2Cl4for Permalloy andH2OandXeF2for diamond) was then investigated to determine whether additional gains in material removal rate could be attained. FIB sharpening of a diamond nanoindenter tip is also presented as a practical example of diamond micromachining withH2Oas the removal rate enhancing species.

ISSN:1071-1023    

DOI:10.1116/1.590197

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

Focused ion beams (FIBs) have found a place in several research thrusts for the manufacture of mini or micro mechanical objects. This article reports the use of FIB in three distinct applications in microfabrication: prototype structures, micron-sized machine tools and microsurgical manipulators, and ion milling of three dimensional features. Examples of each of these applications are given with the FIB component identified as the enabling or critical component in the technology. The possibility of using FIB milling as part of a production method for micron-sized machine tools is discussed, and the mass production consequences of molds fabricated by three dimensional ion beam milling is also considered. The mathematical procedure and programming steps needed to accurately control FIB three dimensional milling are outlined.

ISSN:1071-1023    

DOI:10.1116/1.590198

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

Ga focused-ion-beam (FIB)-assisted etching of single-crystal diamond and thin film diamond inXeF2was studied. The etch yield in FIB-assisted etching of diamond inXeF2is enhanced some six times over the physical sputtering yield. In the crystal orientation dependence of the etch yield in FIB-assisted etching, the (100) face produced the highest etch yield of the three faces—(100), (110), and (111). Thin film diamond produces the lowest etch yield. A diamond field emitter with a tip radius of less than 100 nm was obtained using Ga FIB spot exposure.

ISSN:1071-1023    

DOI:10.1116/1.590199

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

A new method to fabricate single-electron tunneling structures with magnetic materials using focused ion beam (FIB) sputtering and lithography techniques is proposed. By using this method, a small metal island with a size comparable to or smaller than the FIB diameter, connected with source and drain electrodes via tunnel junctions, can be fabricated. In the present article, some important parameters in this method, such as sputtering yields of the photoresist (AZ 1350) and nickel (Ni) layers, were measured and cross-sectional images of the grooves delineated on aAZ/Ni/SiO2substrate, which is the basic structure in this method, were observed. At present, a 0.4-μm-wide groove is obtained. However, this width is limited not by a fundamental process but by noise in the scan signal and stage vibration.

ISSN:1071-1023    

DOI:10.1116/1.590200

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

We developed focused ion beam direct deposition as a new method for fabricating patterned metal films directly on substrates. We designed and constructed a focused ion beam apparatus which satisfied demanded capabilities for direct deposition such as low energy and fine focused beam, high beam current density, high vacuum condition, changeability of ion species, precise and wide range patterning, sample observation by an optical microscope, and quick sample exchange. We also developed liquid alloy–metal ion sources for conductive materials, superconductive material and magnetic material. We tried to apply the focused ion beam direct deposition method to IC modification, surface acoustic wave (SAW) devices, SQUIDs, multilayers, and probing on small crystals. In SAW devices, SQUIDs, and multilayers, fabricated devices had comparable performance to devices fabricated by ordinary photolithographic processes. In IC modification and probing on small crystals, a low resistant and flexible connection was confirmed. We proved that focused ion beam direct deposition method is a useful tool for research and development such as prototyping.

ISSN:1071-1023    

DOI:10.1116/1.590201

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

Recent development in the application of a focused ion beam to preparation of thin foil specimens for transmission electron microscopy observation has been reviewed. It has been shown that this technique is very powerful for characterization of a variety of industrial materials.

ISSN:1071-1023    

DOI:10.1116/1.590202

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

We present a dynamical simulation approach by Monte Carlo calculation to describe atomic mixing phenomena in depth profiling of multilayered systems. This approach is based on the binary encounter model, taking into account (1) generation of both the interstitial atoms and vacancies and (2) annihilation of the vacancies. The results indicate that the simulation describes very well the depth profiles of AlAs/GaAs multilayered systems obtained by Auger electron spectroscopy. It predicts the existence of preferential sputtering of Al in the AlAs layer, where the Auger intensity of the As(MVV—32 eV) in the AlAs layer is about 1.2 times larger than that of the GaAs layer for 0.5 keVAr+sputtering.

ISSN:1071-1023    

DOI:10.1116/1.590203

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

A focused ion beam (FIB) has been actively applied for preparation of about 0.1-μm-thick specimens for transmission electron microscopes (TEMs). For device failure analyses, however, it is mostly difficult to prepare the exact-point TEM specimens. The reason is that the failures are mostly beneath the surface and their exact locations are unknown. Then, even step-by-step FIB cross sectioning may sputter away the failures in the TEM specimen preparation. In the present study, we review two proposals for exact-point TEM microscopy using FIB specimen-preparation technique: (1) high-voltage scanning electron microscopes (HV-SEMs) imaging in TEM and (2) energy filtering TEM (EF-TEM) imaging. The HV-SEM imaging provides information on not only the sample surface but also the inner structure up to about 1μm deep. The EF-TEM imaging is applicable even for 0.5-μm-thick specimens at 100 kV in the accelerating voltage, in contrast with about 0.1-μm-thick specimens for conventional TEM imaging. Preliminary experiments have supported that either proposal presumably improves the yield of the exact-point TEM inspection.

ISSN:1071-1023    

DOI:10.1116/1.590204

出版商:American Vacuum Society    

年代:1998

数据来源: AIP