摘要:

Two types of deep levels are observed by deep‐level transient spectroscopy in undoped Hg1−xCdxTe controlling performance of infrared devices. The arrangement of defect atoms has been modeled within a five‐atom cluster embedded in the ideal Hg1−xCdxTe crystal and off‐diagonal elements of the impurity potential matrix have been included explicitly. An explanation of the upper level as a Te‐antisite defect and of the lower one as a Hg–Te‐double‐antisite defect is proposed.

ISSN:1071-1023    

DOI:10.1116/1.584933

出版商:American Vacuum Society    

年代:1990

数据来源: AIP

摘要:

A new objective lens structure is proposed for observing the bottom of submicron trenches with a low‐voltage scanning electron microscope. By placing a magnetic coil close to the specimen, and using it to apply a strong magnetic field to the specimen, electron beam current is increased under high spatial resolution of secondary electron (SE) images. This increase in current increases the SEs coming out of a trench, and this makes it possible to observe the bottom of the trench more clearly. An experimental system is constructed, and submicron trenches are observed. The experimental results show that the proposed structure enables clear bottom observation of trenches 0.6 μm wide by 5 μm deep.

ISSN:1071-1023    

DOI:10.1116/1.584934

出版商:American Vacuum Society    

年代:1990

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.584935

出版商:American Vacuum Society    

年代:1990

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.584936

出版商:American Vacuum Society    

年代:1990

数据来源: AIP