摘要:

The redistribution of boron implanted into TaSi2/poly‐Si gates after high temperature anneals has been investigated as a function of the implantation dose and energy as well as the implantation scheme, i.e., boron implantation either into the silicide or into the poly‐Si prior to TaSi2deposition. Implantation and diffusion profiles were obtained by means of secondary ion mass spectrometry whereas the electrical characterization of the resulting structures was performed using high‐frequency capacitance–voltage measurements. The results indicate that boron can easily diffuse from TaSi2into poly‐Si and vice versa at 900 °C. Independent of the implantation scheme, the boron concentration within poly‐Si was found to saturate at ∼1×1019at/cm3for boron doses>5×1014at/cm2. The excess of boron always accumulates within the silicide. The solubility limit of boron within TaSi2was estimated to be>3.5×1020at/cm3. Boron concentrations of ∼1×1019at/cm3within poly‐Si were found to be sufficient to realizep+‐polycide gates with stable and reproducible threshold voltages similar top+‐poly‐Si gates. The observed boron redistribution behavior within the polycide is discussed in terms of combined lattice and grain boundary diffusion as well as grain boundary segregation.

ISSN:1071-1023    

DOI:10.1116/1.584434

出版商:American Vacuum Society    

年代:1989

数据来源: AIP

摘要:

One pulse of a KrF excimer laser emitting radiation at a wavelength of 248 nm was used to completely fill via holes in silicon dioxide (diameter: 2 μm, depth: 1 μm) by melting a 600‐nm‐thick gold layer on a 100‐nm‐thick Cr adhesion layer. The pulse width was 23 ns full width at half‐maximum (FWHM) and the pulse energy was 160 mJ, yielding a laser fluence at sample surface of ∼0.6 J/cm2. The result is a nearly planar structure.

ISSN:1071-1023    

DOI:10.1116/1.584435

出版商:American Vacuum Society    

年代:1989

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.584436

出版商:American Vacuum Society    

年代:1989

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.584437

出版商:American Vacuum Society    

年代:1989

数据来源: AIP