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21. |
Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular‐beam epitaxy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 615-616
D. C. Radulescu,
G. W. Wicks,
W. J. Schaff,
A. R. Calawa,
L. F. Eastman,
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ISSN:1071-1023
DOI:10.1116/1.584413
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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22. |
Molecular‐beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48As quantum wells |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 617-619
J. L. de Miguel,
M.‐H. Meynadier,
M. C. Tamargo,
R. E. Nahory,
D. M. Hwang,
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PDF (406KB)
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摘要:
The evolution of the structural and optical quality of molecular‐beam epitaxial (MBE) grown InAs/In0.52Al0.48As pseudomorphic quantum wells with increasing well thickness has been analyzed by transmission electron microscopy (TEM) and photoluminescence measurements. TEM was used to assess the commensurability of the samples as well as to confirm the build up of stress as the InAs layer is made thicker. Under our growth conditions, intense intrinsic photoluminescence is observed for InAs layers as thick as 30 Å. Beyond this thickness a deterioration of the photoluminescence characteristics occurs due to roughening of the interfaces rather than to relaxation of the InAs lattice.
ISSN:1071-1023
DOI:10.1116/1.584414
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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23. |
Summary Abstract: The growth of strained InGaAs on GaAs: Kinetics versus energetics |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 625-626
G. J. Whaley,
P. I. Cohen,
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ISSN:1071-1023
DOI:10.1116/1.584416
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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24. |
Study of molecular‐beam epitaxy GaAs1−xSbx(x<0.76) grown on GaAs(100) |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 627-630
J. H. Zhao,
A. Z. Li,
J. Jeong,
D. Wong,
J. C. Lee,
M. L. Milliman,
T. E. Schlesinger,
A. G. Milnes,
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PDF (363KB)
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摘要:
Lattice mismatched 0.5 to 1‐μm‐thick GaAs1−xSbxepilayers were grown on (100)n‐type GaAs by molecular‐beam epitaxy (MBE) throughout the whole composition range and characterized for Sb content up to 0.76. The Sb incorporation coefficient is found to be 0.42 at a substrate temperature of 480 °C. The epilayer quality was examined by x‐ray diffraction, photoluminescence, and photoresponse. The relationship between energy band gap of GaAs1−xSbxand Sb content at room temperature is found to be in good agreement with the result of Nahoryetal. and that at 77 K is established and can be reasonably described by the estimated one from the binary band gaps of GaAs and GaSb at 77 K and the ternary band gaps of GaAs1−xSbxat 300 K. Both majority electron and hole traps in GaAs1−xSbxepilayers were characterized.
ISSN:1071-1023
DOI:10.1116/1.584417
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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25. |
Characterization of Al0.25Ga0.75As grown by molecular‐beam epitaxy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 631-635
M. J. Lin,
E. C. Larkins,
Y. C. Pao,
D. Liu,
G. Yoffe,
T. K. Ma,
J. S. Harris,
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摘要:
The effects of growth temperature and As4/Ga beam equivalent pressure ratio on molecular‐beam epitaxial Al0.25Ga0.75As were studied with deep level transient spectroscopy (DLTS), photoluminescence (PL), secondary ion mass spectrometry (SIMS), Hall effect, capacitance profiling, and Nomarski microscropy. The room temperature photoluminescence efficiency is controlled by a deep trap atEc−0.79 eV. Careful analysis shows that the trap concentration is independent of the oxygen concentration. The dependence of this trap on growth temperature and V/III ratio suggests that this trap is related to stoichiometric defects caused by arsenic rich growth. A strong correlation between trap concentration and surface roughness supports the idea that this trap forms as a result of nonstoichiometric growth. SIMS measurements show that the incorporation of oxygen, sulfur, and carbon decreases as the growth temperature increases. Finally, the Hall mobility is found to decrease as the growth temperature increases. This drop in mobility may be caused by material inhomogeneity caused by changes in the growth kinetics.
ISSN:1071-1023
DOI:10.1116/1.584418
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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26. |
Summary Abstract: Growth of GaAs and AlGaAs on misoriented (110) GaAs by molecular‐beam epitaxy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 636-637
E. C. Larkins,
Y. C. Pao,
D. Liu,
M. J. Lin,
G. Yoffe,
J. S. Harris,
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PDF (148KB)
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ISSN:1071-1023
DOI:10.1116/1.584375
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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27. |
Summary Abstract: Reflection high‐energy electron diffraction intensity oscillation during the growth of GaAs by chemical‐beam epitaxy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 642-643
T. H. Chiu,
W. T. Tsang,
J. E. Cunningham,
A. Robertson,
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PDF (221KB)
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ISSN:1071-1023
DOI:10.1116/1.584377
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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28. |
Preparation of molecular‐beam epitaxy growth high‐quality GaAs–AlGaAs quantum wells and their properties investigation |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 644-646
Y. H. Huang,
M. Y. Kong,
D. Z. Sun,
J. B. Liang,
Y. P. Zhen,
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PDF (251KB)
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摘要:
The quality of molecular‐beam epitaxy (MBE) growth GaAs–AlGaAs are essential for the properties of new type microstructural devices. Improved growth conditions in MBE have permitted the fabrication of high‐quality ultrathin microstructural materials. In this paper, we report the preparation of MBE grown high‐quality GaAs–AlGaAs quantum wells (QW’s) and their properties. The 1.2 meV FWHM ofE1hindicates the high quality of the material. Growth conditions (especially growth temperatureTsand precise control of the layer thickness) and the substrate preparation are important factors for MBE growth of high‐quality ultrathin microstructural materials. The molecular‐beam sources of our MBE system are vertical type Knudsen cells employing PBN crucibles. Entire component parts of our MBE system were made in China.
ISSN:1071-1023
DOI:10.1116/1.584378
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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29. |
Summary Abstract: The chemical nature and atomic structure of midgap levels in molecular‐beam epitaxially grown AlxGa1−xAs |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 647-648
M. G. Spencer,
T. A. Kennedy,
R. Magno,
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PDF (181KB)
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ISSN:1071-1023
DOI:10.1116/1.584379
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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30. |
Summary Abstract: Effect of electric field on the exciton transition energies and oscillator strengths of undoped GaAs–AlGaAs quantum well structures determined by photocurrent spectroscopy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 6,
Issue 2,
1988,
Page 649-650
P. W. Yu,
G. D. Sanders,
K. R. Evans,
D. C. Reynolds,
K. K. Bajaj,
C. E. Stutz,
R. L. Jones,
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PDF (170KB)
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ISSN:1071-1023
DOI:10.1116/1.584380
出版商:American Vacuum Society
年代:1988
数据来源: AIP
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