摘要:

This paper will investigate the properties and structure of coevaporated NbSi2under a variety of annealing times and temperatures. Data from transmission electron microscopy (TEM)insituvacuum annealing, conventional furnace annealing, and infrared rapid thermal annealing will be presented. The temperatures in this study ranged from room temperature to 950 °C for these annealing techniques. The results obtained in this work will be contrasted to those obtained for other interconnect materials such as polysilicon and refractory metal silicides.

ISSN:1071-1023    

DOI:10.1116/1.582939

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

摘要:

A noble self‐aligned process has been developed for bipolar very large‐scale integrated (VLSI) applications. The structure considered here is a polysilicon emitter system where diodes and resistors are fabricated within the poly‐Si layer and integrated into memory cell units with silicide interconnects. The process was designed to eliminate device degradation related to dopant segregation arising from high temperature cycles. The silicide reaction was studied by conventional furnace anneal in H2and by rapid thermal anneal (RTA) in Ar and N2. The sintering ambient has a pronounced effect on the silicide growth and film texture. A tremendous improvement in process flexibility and reproducibility can be attained by using N2, which drastically retards the silicide growth. Auger electron spectroscopy (AES) and chemical data suggested that the Ti–N2interaction is of physical nature. The dependence of TiSi2/poly‐Si contact resistance on the poly‐Si doping concentration was measured for As and B doses of 1.0×1014–1.5×1016/cm2. Dopant redistribution during RTA and its effect on the contact resistance were investigated. A model is proposed to explain the observed variation of contact resistance with short time anneal cycles.

ISSN:1071-1023    

DOI:10.1116/1.582941

出版商:American Vacuum Society    

年代:1985

数据来源: AIP