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| 21. |
Dependence of electrical characteristics of MBE Ga0.47In0.53As planar doped barriers on InP substrates |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 194-196
A. S. Brown,
S. C. Palmateer,
G. W. Wicks,
L. F. Eastman,
A. R. Calawa,
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摘要:
The potential barrier height in planar‐doped barrier structures is particularly sensitive to the concentration of background impurities present in the nominally undoped regions. MBE grown GaInAs lattice matched to InP typically hasn‐type background carrier concentrations in the 1016cm−3range. This high level can cause lowering of the barrier to near zero. By subjecting the InP substrates to a heat treatment process before growth in order to inhibit impurity outdiffusion higher purity GaInAs can be grown and planar‐doped barrier devices with more reproducible characteristics are expected.
ISSN:1071-1023
DOI:10.1116/1.582777
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 22. |
Summary Abstract: Inelastic tunneling characteristics of AlAs/GaAs heterojunction barriers |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 201-202
R. T. Collins,
J. Lambe,
T. C. McGill,
R. D. Burnham,
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PDF (144KB)
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ISSN:1071-1023
DOI:10.1116/1.582779
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 23. |
Summary Abstract: Single crystal SrF2on GaAs(001)—an electron beam resist and dielectric for insulator/semiconductor structures |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 203-204
Philip W. Sullivan,
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PDF (132KB)
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ISSN:1071-1023
DOI:10.1116/1.582780
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 24. |
Summary Abstract: Epitaxial regrowth of highly doped amorphous silicon films grown by MBE |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 205-205
D. Streit,
R. A. Metzger,
F. G. Allen,
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PDF (74KB)
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ISSN:1071-1023
DOI:10.1116/1.582781
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 25. |
Interaction of indium on Si surface in Si molecular beam epitaxy (MBE) |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 206-208
H. T. Yang,
W. S. Berry,
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PDF (386KB)
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摘要:
To investigate the feasibility of using indium to replace Ga as an agent for silicon surface cleaning at lower substrate temperature in ultrahigh vacuum, we have examined the in‐diffusion of indium and the surface defects introduced into silicon for various indium desorption processes. For the dynamic desorption case, which simulated the actual cleaning procedure, no significant surface defects were identified, nor was there any indium at the near surface region of the silicon substrate.
ISSN:1071-1023
DOI:10.1116/1.582782
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 26. |
Summary Abstract: Growth ofn‐type Ge on Si by MBE |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 209-210
P. D. Wang,
E. Selvin,
G. Y. Robinson,
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PDF (124KB)
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ISSN:1071-1023
DOI:10.1116/1.582783
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 27. |
Summary Abstract: Molecular beam epitaxial growth of CdTe films on InSb |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 211-211
R. F. C. Farrow,
A. J. Noreika,
F. A. Shirland,
W. J. Takei,
M. H. Francombe,
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PDF (56KB)
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ISSN:1071-1023
DOI:10.1116/1.582784
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 28. |
Summary Abstract: Growth of epitaxial semiconductor/dielectric/semiconductor double heterostructures by molecular beam epitaxy: InP/fluoride/InP(001) |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 212-213
C. W. Tu,
S. R. Forrest,
W. D. Johnston,
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PDF (92KB)
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ISSN:1071-1023
DOI:10.1116/1.582785
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 29. |
Electron densities in InAs–AlSb quantum wells |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 214-216
Chin‐An Chang,
L. L. Chang,
E. E. Mendez,
M. S. Christie,
L. Esaki,
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PDF (180KB)
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摘要:
Both single wells and superlattices of InAs–AlSb have been grown by molecular beam epitaxy on GaAs substrates. The measured electron densities were found to depend on the processes used to define the sample geometry. While freshly cleaved samples show increasing electron densities and mobilities with the InAs layer thickness, etched samples give rise to much higher densities with no apparent dependence on the thickness. The discrepancies are believed to be related to the hygroscopic nature of AlSb.
ISSN:1071-1023
DOI:10.1116/1.582786
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 30. |
Summary Abstract: MBE grown CdTe films on (001)GaAs and (001)InSb |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 2,
1984,
Page 217-218
H. A. Mar,
K. T. Chee,
N. Salansky,
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PDF (126KB)
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ISSN:1071-1023
DOI:10.1116/1.582787
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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