摘要:

Reactive ion etching of silicon dioxide and positive photoresist in CHF3–C2F6–O2–He plasma in a parallel‐plate etcher is studied using the response surface experimental design procedure. The experimental results are reproducible within 5%. Analytical expression for the dependence of the etch rates on the plasma parameters (oxygen concentration, pressure, rf power) are obtained. Detailed contour maps of the behavior of the etch rates as functions of the plasma parameters are prepared from the analytic expressions. Calculated etch rates are within 10% of the measured value at a large number of points in the range of the parameters explored. Using the results of this study it has been possible to etch contact holes with a variety of sidewall slopes. Predictability of the etch rates from the analytical expressions for resist and silicon dioxide also provided great flexiblity while planarizing a dielectric over patterned aluminum and etching of vias in the planarized but unevenly thick dielectric.

ISSN:1071-1023    

DOI:10.1116/1.584177

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

In this paper, we report the application of contrast enhanced lithography tog‐line (436 nm) lithography using our new water‐soluble contrast enhancing material, named WSP (water‐soluble photopolymer). It has been found that the WSP is effectively utilized about resist pattern profile, resolution, and pattern width control for exposure energy, depth of focus, mask linearity. By use of WSP, submicron lithography has been successfully attained without decrease of throughput and complexity.

ISSN:1071-1023    

DOI:10.1116/1.584178

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

A new method of using focused ion beams to micromachine contoured surfaces in solids is described. Instead of using a raster scan with a uniform scan rate, the new technique, called vector scanning, uses a nonuniform scan rate which is varied in a manner related to the profile of the desired sputter crater. A simple relationship between the scan rate and the desired surface contour has been derived and used to develop an algorithm for the deflecting voltages needed to micromachine slanted surfaces of the type desired for the production of surface emitting semiconductor lasers, and sinusoidal surfaces which may be used as optical diffraction gratings.

ISSN:1071-1023    

DOI:10.1116/1.584179

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.584180

出版商:American Vacuum Society    

年代:1988

数据来源: AIP