摘要:

We describe the characterization of conventional diazonaphthoguinone–novolac resin‐type positive photoresist forg‐line (436‐nm) andi‐line (365‐nm) exposure using water‐soluble contrast enhancement materials. In the experiments, the Rayleigh’s theoretical resolution and contrast enhancement capability of the water‐soluble contrast enhancement materials were set to be equal between the each wavelength exposure. As a result, the pattern profiles of the resist were better, however, the latitude of depth of focus was worse forg‐line exposure than fori‐line exposure. Mask linearity had no difference between them. It was found that the improvement of the pattern profiles fori‐line exposure was achieved by using a higher photobleachable photoresist ati‐line.

ISSN:1071-1023    

DOI:10.1116/1.584786

出版商:American Vacuum Society    

年代:1989

数据来源: AIP

摘要:

The internal structure of a novolak/quinonediazide type positive photoresist image was observed using a cross‐sectional exposure method. On the surface of a photoresist image, a photochemically inert layer was detected which does not return to diazo and phenolic compounds with acid treatment. This shows that this layer does not consist of the azoxy compounds. Fourier transform infrared spectrum indicates that this layer includes azocoupling reaction products. It was also found that the formation of the photochemically inert layer and the dissolution of the layer takes place simultaneously at the development front and a resist image is formed during the competition between these two reactions.

ISSN:1071-1023    

DOI:10.1116/1.584787

出版商:American Vacuum Society    

年代:1989

数据来源: AIP

摘要:

A novel silicone‐based positive photoresist (SPP) is developed for a two‐layer resist system. SPP is composed of an alkali‐soluble silicone polymer (APSQ) and a diazonaphthoquinone compound as a sensitizer. APSQ is newly synthesized by means of acetylation of polyphenylsilsesquioxane (PSQ). A fine SPP pattern below 0.5 μm can be fabricated with a g‐line stepper (NA=0.6) using a two‐layer resist system. Moreover, a 0.4 μm line/space pattern is successfully fabricated at a defocus of ±0.4 μm. The high oxygen reactive ion etching (O2RIE) resistance of SPP makes possible the fabrication of a submicron pattern with a high aspect ratio in a two‐layer system. Pattern width loss can be negligible during O2RIE of a 2 μm thick bottom resist when a 0.6 μm thick SPP is used as the top imaging layer.

ISSN:1071-1023    

DOI:10.1116/1.584788

出版商:American Vacuum Society    

年代:1989

数据来源: AIP

摘要:

The effect of transferring in ultrahigh vacuum conditions between molecular‐beam epitaxy chambers on the quality of regrown interfaces is addressed. In particular, the Al0.35Ga0.65As/GaAs heterointerface is probed by low‐temperature photoluminescence using a single quantum well (SQW) configuration, where the growth of the second interface has been interrupted and resumed after taking the sample back from the UHV transferring modules. Comparison of the emission characteristics of these SQW structures to others grown uninterruptedly indicates the feasibility of the UHV multichamber configuration for the realization of high‐quality heterostructures involving incompatible materials or different processing steps.

ISSN:1071-1023    

DOI:10.1116/1.584789

出版商:American Vacuum Society    

年代:1989

数据来源: AIP