摘要:

Impurities can affect the properties of silicides directly by virtue of their presence. Impurities can also influence the processes by which silicides are formed. The effect of impurities on the reaction of transition metal films with a silicon substrate induced by thermal annealing are well documented. The interpretation of these results is discussed. It is shown that impurity redistribution is a major factor in determining how significant the effect of an impurity is. Redistribution observed for dopant impurities is also discussed.

ISSN:1071-1023    

DOI:10.1116/1.582872

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

Rutherford backscattering spectrometry (RBS) provides a unique combination of sensitivity and accuracy for characterization of thin films. Applications include analyses of composition, contamination levels, and determination of the thickness‐density product of both silicide layers and adjacent films. The large mass differences present in refractory metal silicide films make them ideally suited for RBS analysis. Excellent sensitivity, typically to tens of ppm for heavy elements, allows use of RBS for analyses of diffusion of refractory metals into other films, and study of cross‐contamination effects. This paper reviews the elements of Rutherford backscattering spectrometry which affect its applicability to refractory metal silicide analysis, and gives specific examples of these applications. The use of RBS analysis for determination of composition and contamination levels is demonstrated, including an estimation of the statistical uncertainty in such calculations. An example of trace refractory metal presence in an adjacent oxide layer is quantitatively calculated to be in the hundred ppm range. Further, the depth resolution generally accessible with normal angle detection is evaluated for various disilicides as a function of depth, and is found to be on the order of tens of nanometers. In addition, the development of two types of automated RBS data analysis is described. One type, a nonlinear least squares data analysis, provides accurate values for the average composition and density‐thickness product of multiple films. The value of such a program lies in its general applicability to any laterally uniform sample. The second method takes advantage of the separation of elemental signals, characteristic of thin film refractory metal silicide RBS spectra, to rapidly generate a composition depth profile.

ISSN:1071-1023    

DOI:10.1116/1.582873

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

Stoichiometric shifts in the refractory metal silicides due to subsequent thermal processing have been an important consideration in VLSI processing. Optimal stoichiometry for interconnect application has been controversial. Shift in silicon‐to‐metal atomic ratio of the metal silicide films, due to heat treatment under inert and oxidizing ambients, have been studied. Existence of a thermodynamical equilibrium stoichiometry has been investigated by studying films on both silicon and silicon dioxide. The silicide films were deposited by planar magnetron cosputtering and Rutherford backscattering was the primary technique used for monitoring the stoichiometry.

ISSN:1071-1023    

DOI:10.1116/1.582876

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

The techniques and procedures utilized to sputter the silicides of Mo, Ta, and Ti in a Varian 3180/3190TMsystem1are presented. The electrical resistivity of a thin film is a sensitive indicator of film purity and/or uniformity.2,3The affect of various system parameters on film resistivity is also presented. Variable parameters investigated included argon pressure, cathode power, sputtering rate, wafer temperature, and wafer bias.

ISSN:1071-1023    

DOI:10.1116/1.582877

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

The interaction of titanium films with single crystal silicon during rapid thermal annealing (RTA) has been studied by Auger analysis and SEM. The diffusion of silicon in titanium to form a silicide has been investigated as a function of the thickness of the interfacial silicon dioxide between the film and the substrate. For a clean interface the diffusion is initiated at lower temperatures, approximately 600 °C. Ion beam mixing of the interface caused by the implantation of heavy ions, such a arsenic, through the titanium film helps to render the interfacial oxide ineffective and thereby facilitates Si diffusion into the film. The presence of the interfacial oxide has been shown to affect the smoothness of the final silicide layer and the silicide–silicon interface. Silicide films produced from ion‐mixed films have been found to have smoother surfaces and interfaces than nonion‐mixed samples. Application of ion‐mixed films to devices has been studied.

ISSN:1071-1023    

DOI:10.1116/1.582878

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

There are hardly any high technology applications which do not involve composite materials with a coating of specific properties on a substrate with another set of properties. This overview is concerned with the various coating methods for a variety of substrates for metallurgical, optical, and electronic applications. Selection criteria for process/apparatus for large scale applications are presented. Economic considerations are discussed.

ISSN:1071-1023    

DOI:10.1116/1.582880

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

The development, characterization, and performance evaluation of two new thin (≲20 μm) ceramic coatings for high temperature materials protection is reviewed. These coatings were silica produced by two vapor deposition procedures and ceria formed by sol–gel technology. The current position regarding the use of these coatings in the UK nuclear industry is described.

ISSN:1071-1023    

DOI:10.1116/1.582881

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

This paper deals with the relations and interactions of the substrate, the interface, and the functional hard overlay or diffusion coating deposited by chemical or physical vapor deposition, CVD or PVD, respectively, and how these structures influence the overall mechanical and physicochemical properties of the composite. Emphasis is given to the friction and wear behavior of the refractory carbides, nitrides, borides, and oxides, with and without lubrication, to the characterization of the mechanical strength of the interface as measured by the scratch test and thus, of the adhesion and cohesion properties, and to the corrosion behavior, mainly of TiC.

ISSN:1071-1023    

DOI:10.1116/1.582883

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

A brief survey is given of the use of amorphous materials as xerographic photoreceptors. Included are a discussion of the basic physics and materials parameters required for operational devices and the methods of fabrication. The review includes current material classes such as chalcogenides and organic solids and new potential photoreceptors based on hydrogenated amorphous silicon.

ISSN:1071-1023    

DOI:10.1116/1.582884

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

This paper reviews thin film transistor technology with a detailed emphasis on amorphous silicon (a‐Si:H) devices. The fabrication and large area technology issues are described. The materials parameters that affect device performance are dominated by interface effects and the gate dielectric. The problem of characterizing the interfaces is discussed. Applications in liquid crystal displays (LCD) and image sensors are described. It is concluded that there is considerable promise for this rapidly expanding technology.

ISSN:1071-1023    

DOI:10.1116/1.582902

出版商:American Vacuum Society    

年代:1984

数据来源: AIP