ISSN:1071-1023    

DOI:10.1116/1.584342

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

Practical results of photomask defect repair using focused ion beam (FIB) technology are presented. From Auger electron analysis, the deposited carbon film for clear defect repair contains 22% gallium, which is an element of the ion beam. Substrate damage produced by ion beam irradiation can be removed incorporating CHF3+O2reactive ion etching. Printing results using a 5:1 stepper show that the FIB technology can be applied to photomask production.

ISSN:1071-1023    

DOI:10.1116/1.584343

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

A one‐step process for the repair of micron and submicron sized clear defects in photomasks is described. Opaque films are deposited at the intersection of the flux of organic monomers from a gas jet and a focused Ga ion beam. Focused ion beam induced deposition differs from other ion‐induced, electron beam, and laser processes due to the very high ion current density, and the sputtering of the material as it is being deposited. We have explored the deposition–sputtering rate competition for several precursor materials as a function of gas jet pressure (molecular flux) and ion beam dose rate (scanning conditions). The deposition rate for our process is linear with ion dose at 330 Å per 1017ions/cm2and independent of dose rate over a wide range of conditions. The deposited films are cross‐linked polymers containing as much as 25 at. % Ga, adhere to either Cr or glass, and are chemically inert. Scanning slit microdensitometry measurements show a white‐light extinction coefficient of 2.2×10−3Å−1. As a result, opaque deposits can be made at the same ion dose and beam scanning conditions used for Cr removal in mask repair.

ISSN:1071-1023    

DOI:10.1116/1.584344

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

摘要:

Ion beam assisted etching (IBAE) of SiO2and Si3N4is described which employs inert gas ion beam and gas mixtures based on XeF2and H2. Etching rates of SiO2and Si3N4were measured as functions of various parameters such as gas pressure, mixing ratio of XeF2to H2, ion dose, ion species, and irradiation angle. Significant enhancements up to 100 and 40 times larger than physical sputtering were achieved for SiO2and Si3N4, respectively. Etching selectivity of the SiO2to Si was varied from 0.07 to 6 depending on the gas mixing ratio. These results allow etching rates as well as selectivity of SiO2to Si to be tailored to specific requirements. Simulation is performed to show the cross‐sectional profiles formed by focused ion beam and to calculate the ion dose implanted into substrates. Auger analysis and surface morphology are mentioned.

ISSN:1071-1023    

DOI:10.1116/1.584345

出版商:American Vacuum Society    

年代:1988

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.584346

出版商:American Vacuum Society    

年代:1988

数据来源: AIP