摘要:

We present a new technique for performing lithography with scanning probes that has several advantages over standard methods. This hybrid lithography system combines the key features of the atomic force microscope (AFM) and the scanning tunneling microscope (STM) by incorporating two independent feedback loops, one to control current and one to control force. We demonstrate a minimum resolution of 41 nm and nanometer alignment capabilities. This lithography system is capable of writing continuous features over sample topography. Topography is often present in real patterning applications and poses problems for AFM and STM lithography. We report 100 nm resist features patterned over 180 nm of topography created by local oxidation of silicon. The hybrid AFM/STM system is designed as a robust scanning probe lithography tool, capable of high-speed patterning and suited for integrated circuit lithography applications.

ISSN:1071-1023    

DOI:10.1116/1.589530

出版商:American Vacuum Society    

年代:1997

数据来源: AIP

摘要:

The use of catalytically active nanoclusters as a novel material for atomic force microscope (AFM) nanolithography is demonstrated. Films were prepared from colloidal Au nanoparticles and giant Pd clusters. Lithographic patterns were generated using the contact area of the AFM tip to physically displace nanoclusters, forming two-dimensional patterns on silicon oxide and functionalized silicon surfaces. Linewidth was found to depend on the force applied to the nanoparticles and the number of tip passes used to generate the pattern. Conditions were optimized to clear scanned areas using minimum applied force. Patterned films were used as templates for the selective deposition of electroless metal, which served as a robust plasma etch mask for pattern transfer into the underlying substrate to a depth of 200 nm. Minimum linewidths of approximately 35 nm were achieved in etched samples.

ISSN:1071-1023    

DOI:10.1116/1.589531

出版商:American Vacuum Society    

年代:1997

数据来源: AIP

摘要:

This article presents the extension of krypton fluoride (KrF) excimer laser lithography. An 0.18 μm device can be fabricated by KrF excimer laser lithography when weak off-axis illumination is combined with an attenuated phase-shifting mask, a high-performance antireflective layer, and a high-numeral-aperture exposure tool. A 1.0 μm depth-of-focus can be achieved for 0.18 μm rule logic patterns. The weak off-axis illumination can reduce the influences of the secondary peak in the high-duty periodic patterns, and retain the depth-of-focus for isolated patterns when it is used in combination with an attenuated phase-shifting mask. A high-performance antireflective layer can increase the depth-of-focus because a uniformly exposed area in the photoresist can be formed when the light reflected from the substrate is eliminated.

ISSN:1071-1023    

DOI:10.1116/1.589532

出版商:American Vacuum Society    

年代:1997

数据来源: AIP

摘要:

It is found that large radial and azimuthal distortions are generated if the geometric conditions defined for the symmetric magnetic doublet lens system are not met for the inner and outer radii of the lens casing. These distortions are found by trajectory calculation and by computing third-order aberration coefficients. When the inner radius of the object side lens casing is decreased, then pincushion distortion is generated. When the outer radius of the cylindrical object side lens casing is decreased, barrel distortion is generated. Anisotropic distortion is generally present, changing sign when the inner radius of the casing is decreased significantly. The radial distortion can be compensated by adjusting the inner and outer radii of the lens casing, whereas the azimuthal distortion cannot be compensated by such adjustment. The origin of these distortions can be well understood by studying the magnitude of the maxima and minima of the axial magnetic field and magnetic vector potential. Field curvature, astigmatism, coma radius, coma length, axial chromatic, and spherical aberrations are not influenced by such variations of the inner or outer radii of the lens casing.

ISSN:1071-1023    

DOI:10.1116/1.589533

出版商:American Vacuum Society    

年代:1997

数据来源: AIP

摘要:

Charging and topography evolution simulations during plasma etching of high aspect ratio line-and-space patterns reveal that electron shadowing of the sidewalls critically affects charging damage. Decreasing the degree of electron shadowing by using thinner masks decreases the potentials of the etched features with a concomitant reduction in Fowler–Nordheim tunneling currents through underlying thin gate oxides. Simultaneously, the potential distribution in the trench changes, significantly perturbing the local ion dynamics which, in turn, cause the notching effect to worsen. Since the latter can be reduced independently by selecting an appropriate etch chemistry, the use of thinner (hard) masks is predicted to be advantageous for the prevention of gate oxide failure.

ISSN:1071-1023    

DOI:10.1116/1.589336

出版商:American Vacuum Society    

年代:1997

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.589337

出版商:American Vacuum Society    

年代:1997

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.589338

出版商:American Vacuum Society    

年代:1997

数据来源: AIP