摘要:

The surface charge carrier transport of electrons in accumulation mode insulated gate FET’s fabricated on [100] oriented samples of semi‐insulating InP has been investigated, both as a function of surface and dielectric preparation as well as of temperature over the range of 85 to 300 K. Results of these studies indicate that room temperature field‐effect mobilities as large as 4200 cm2/V s and effective mobilities of 3300 cm2/V s can be achieved in the linear region on material whose bulk Hall mobility does not exceed 3000 cm2/V s.

ISSN:1071-1023    

DOI:10.1116/1.582811

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

Numerical studies of the transient and dc electrical behavior of submicron N+N−N+gallium arsenide structures are discussed. It is shown that the transient results are dominated, during the first fraction of a picosecond, by displacement current contributions. Velocity overshoot is less important. Under dc conditions and high bias levels, submicron effects may be masked by transport within the N+regions.

ISSN:1071-1023    

DOI:10.1116/1.582812

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

We survey selected computer simulations or ‘‘experiments’’ relating to the statistical physics of surface phenomena. An introduction to the Monte Carlo and molecular dynamics simulation techniques is presented, followed by chosen computer simulation applications which have been done mainly at the IBM Research Laboratory over the last several years. The examples are taken from studies of the structure and thermodynamics of microclusters, liquid–vapor and liquid–solid interfaces and quasi‐two‐dimensional physisorbed films. An up‐to‐date bibliography of the various topics is given at the conclusion.

ISSN:1071-1023    

DOI:10.1116/1.582836

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

As a first step in the microscopic study of dynamic processes on surfaces and at interfaces, we have considered the thermal desorption of adsorbed species on solid surfaces. We review recent developments based on a classical stochastic diffusion formulation. Using this theory, we obtained a simple rate expression,R=(Ω0/2π)f(T)exp(−De/kT), where Ω0is the surface‐adsorbate vibrational frequency andDethe dissociation energy. For atomsf(T)=1, whereas for moleculesf(T) depends on the parameters for the frustrated rotations at the surface. The effect of coverage on the rate of desorption and the process of desorption into a fluid are also examined. Finally, we discuss the relationship between our theory and the expressions obtained from activated complex (transition‐state) theory.

ISSN:1071-1023    

DOI:10.1116/1.582837

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

We have studied the adsorption and growth of Ga (group III), Sn (group IV), and Sb (group V) on InP(110) clean cleaved surfaces, using a range of surface sensitive techniques. The adsorption processes differ for the three adsorbate elements ranging from cluster growth for Ga to layer upon layer growth for Sb. The systematics of the adsorption processes as well as the mechanisms driving the chemical reactions and interdiffusion are considered and strong indications of a close relationship between adlayer clustering and the movement of atoms across the interface is reported. The electrical barriers at these interfaces are also briefly discussed as well as some studies at liquid nitrogen temperatures for Sn and Al overlayers.

ISSN:1071-1023    

DOI:10.1116/1.582838

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

The activation energy for atomic diffusion often includes terms resulting from a change in ionization state of the diffusing species. It is argued that these terms ought to be affected by the electronic states of the material not only at the site of the diffusion but also within a range of order of the Debye screening length of it. Thus, atomic diffusion ought to be a nonlocal phenomenon with a scale comparable with modern device structures. Major increases in the rate of diffusion near interfaces, surfaces and dislocations are predicted and should be considered when modeling processes. GaAs–AlAs superlattices allow testing of these conclusions.

ISSN:1071-1023    

DOI:10.1116/1.582839

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

The effective potentials for atomic motion on semiconductor surfaces are given in terms of the displacement–displacement correlation functions of the substrate by a Langevin equation approach. The method is illustrated by detailed calculations of the surface dynamics of the unreconstructed Si(100) surface for which several interesting new features are obtained. It is shown that the total effective potential for atomic diffusion on the surface differs substantially from the adatom‐rigid substrate interaction as a result of coupling to the dynamic substrate vibrations.

ISSN:1071-1023    

DOI:10.1116/1.582840

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

We have developed an atomistic model for the growth of GaAs and AlGaAs and have simulated the MBE growth of both the normal (AlGaAs on GaAs) and the inverted (GaAs on AlGaAs) structures along (100) direction using Monte Carlo techniques. We assume the growth to occur under anion overpressure with As2molecular species as the anion source and Ga and Al atoms as the cation sources. We find that some of the differences in the quality of the two interfaces can be explained on the basis of the surface kinetics operational for the two kinds of cations. In our model there is a considerable interlayer surface migration for the Ga atoms due to the relatively weak Ga–As bond compared to the Al–As bond. For comparable substrate temperatures the stronger Al–As bonds lower the interlayer diffusion for Al atoms. The role of this key kinetic step, namely, the interlayer surface migration on the quality of the growth front profiles of GaAs and AlGaAs as well as their interfaces is examined.

ISSN:1071-1023    

DOI:10.1116/1.582841

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.582842

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

By employing a new InP surface preparation procedure based upon KOH/methanol, the interface state density of plasma‐enhanced chemically vapor deposited SiO2/InP structures has been significantly reduced. Capacitance–voltage characteristics of these structures exhibit unusual nonequilibrium behavior which appears to be assoicated with the formation of ap‐type inversion layer and with the presence of interface traps with very slow response times. This surface preparation procedure yields an InP native oxide which has no detectable In2O3and is contaminated with K.

ISSN:1071-1023    

DOI:10.1116/1.582843

出版商:American Vacuum Society    

年代:1984

数据来源: AIP