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| 51. |
Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2on Si |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 649-650
R. J. Hauenstein,
T. E. Schlesinger,
T. C. McGill,
B. D. Hunt,
L. J. Schowalter,
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PDF (188KB)
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ISSN:1071-1023
DOI:10.1116/1.583587
出版商:American Vacuum Society
年代:1986
数据来源: AIP
|
| 52. |
Summary Abstract: Temperature dependence of the electron concentration and spatial distribution inn‐Al0.28Ga0.72As/GaAs heterostructures |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 651-652
Stefan P. Svensson,
Alan W. Swanson,
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PDF (151KB)
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ISSN:1071-1023
DOI:10.1116/1.583588
出版商:American Vacuum Society
年代:1986
数据来源: AIP
|
| 53. |
Summary Abstract: Aharonov–Bohm effect in a molecular beam epitaxially grown double quantum well |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 653-654
M. R. Melloch,
S. Bandyopadhyay,
S. Datta,
R. Noren,
M. S. Lundstrom,
K. Tan,
T. Dungan,
R. G. Reifenberger,
M. Vaziri,
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PDF (137KB)
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ISSN:1071-1023
DOI:10.1116/1.583589
出版商:American Vacuum Society
年代:1986
数据来源: AIP
|
| 54. |
Summary Abstract: Lateralp–njunction formation in GaAs molecular beam epitaxy by crystal‐plane dependent doping |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 655-655
D. L. Miller,
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PDF (130KB)
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ISSN:1071-1023
DOI:10.1116/1.583590
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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| 55. |
Summary Abstract: New quantum transport phenomena and superlattice devices in molecular beam epitaxially grown AlInAs/GaInAs heterostructures |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 656-657
F. Capasso,
K. Mohammed,
A. Y. Cho,
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PDF (137KB)
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ISSN:1071-1023
DOI:10.1116/1.583591
出版商:American Vacuum Society
年代:1986
数据来源: AIP
|
| 56. |
AnomalousI–Vcharacteristics of semiconductor heterojunction diodes due to transmission resonance |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 658-660
Yasuhito Zohta,
Kunio Tsuda,
Yoshiko Someya Hiraoka,
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PDF (279KB)
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摘要:
As sizes of semiconductor devices are reduced, quantum mechanical properties of electrons play an important role. For small heterojunction diodes including a potential barrier, the influence of transmission resonance on current–voltage characteristics is discussed. The diodes have been prepared using a GaAs–AlxGa1−xAs system by MBE. A preliminary result shows the anomalousI–Vcurve which is presumed to be due to transmission resonance.
ISSN:1071-1023
DOI:10.1116/1.583592
出版商:American Vacuum Society
年代:1986
数据来源: AIP
|
| 57. |
Summary Abstract: Ge/Si heterojunction Ohmic contacts formed by molecular beam epitaxy |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 661-661
M. J. Hafich,
R. L. Gillenwater,
G. Y. Robinson,
P. Sheldon,
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PDF (118KB)
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ISSN:1071-1023
DOI:10.1116/1.583593
出版商:American Vacuum Society
年代:1986
数据来源: AIP
|
| 58. |
Summary Abstract:Insitugrown semiconductor/metal/semiconductor structures: Molecular beam epitaxial growth of tungsten layers embedded in single‐crystal GaAs |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 4,
Issue 2,
1986,
Page 662-663
J. P. Harbison,
D. M. Hwang,
J. Levkoff,
G. E. Derkits,
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PDF (151KB)
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ISSN:1071-1023
DOI:10.1116/1.583594
出版商:American Vacuum Society
年代:1986
数据来源: AIP
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