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| 51. |
Summary Abstract: Two‐stage process for silicide formation at metal–silicon interfaces |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 3,
1984,
Page 588-588
R. J. Nemanich,
B. L. Stafford,
W. B. Jackson,
M. J. Thompson,
J. R. Abelson,
T. W. Sigmon,
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PDF (82KB)
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ISSN:1071-1023
DOI:10.1116/1.582848
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 52. |
Summary Abstract: Activated oxygen uptake on HgTe, CdTe, and Hg0.69Cd0.31Te |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 3,
1984,
Page 589-590
J. A. Silberman,
D. Laser,
I. Lindau,
W. E. Spicer,
J. A. Wilson,
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PDF (152KB)
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ISSN:1071-1023
DOI:10.1116/1.582849
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 53. |
Summary Abstract: Fractional quantum effect in transport along the GaAs–AlxGa1−xAs interface |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 3,
1984,
Page 596-596
D. C. Tsui,
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PDF (81KB)
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ISSN:1071-1023
DOI:10.1116/1.582844
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 54. |
Summary Abstract: Elastic and inelastic tunneling characteristics of AlAs/GaAs heterojunctions |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 3,
1984,
Page 597-598
R. T. Collins,
J. Lambe,
T. C. McGill,
R. D. Burnham,
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PDF (168KB)
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ISSN:1071-1023
DOI:10.1116/1.582845
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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| 55. |
Electrical characterization of the GaAs/AlxGa1−xAs interface by conductance DLTS |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 2,
Issue 3,
1984,
Page 599-603
G. N. Maracas,
W. D. Laidig,
H. R. Wittmann,
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摘要:
Experimental data taken from MBE‐grown GaAs/Al0.25Ga0.75As modulation doped structures are presented. Interface states are observed using backside modulated conductance deep level transient spectroscopy. This technique allows evaluation of states within the 2DEG as well as on either side of the interface. Energies of the subbands, Si donors in the AlGaAs, and the amount of band bending have been determined. The measurements agree closely with calculations of band energies in a triangular well with an interface electric field of ∼9×106V/m.
ISSN:1071-1023
DOI:10.1116/1.582846
出版商:American Vacuum Society
年代:1984
数据来源: AIP
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