摘要:

Chemical deposition experiments were performed to determine how surface preparation and film deposition conditions influence the resulting insulator–semiconductor interface composition and chemical structure. Silicon dioxide layers were chemically deposited on indium phosphide by hydrolyzing silicon orthopropoxide. On unoxidized, etched surfaces, coverage was always patchy. On InP with approximately one monolayer of chemisorbed oxygen in a hydrated‐phosphatelike environment, a continuous, ∼60‐Å‐thick SiO2film was formed at room temperature. SiO2attached to the substrate through about one monolayer of Si–O–P bonds. Heating to 50 °C during hydrolysis resulted in a mixed Si–In–P oxide, owing to simultaneous hydrolysis and oxidation processes.

ISSN:1071-1023    

DOI:10.1116/1.582702

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

The anodic oxides on metal‐organically grown GaAs have been investigated by Auger and secondary ion mass spectroscopy (SIMS). The surface of the oxide was found to contain carbon contamination amounting to ∼7 at.%. The carbon contamination was no longer detectable after Auger sputter profiling for 0.6 min (at a rate of 40 Å/min for Ta2O5). Carbon contamination to similar depth on the surface was also observed on freshly etched GaAs. Auger analysis results show a Ga to As atomic ratio of 6:1 for the oxide. As the oxide/GaAs interface is approached, the As concentration increases sharply. The SIMS spectra of the surface and the bulk of the oxide does not show the presence of Ga2O3and As2O3, believed to be the main constituents of anodic oxides, but peaks corresponding to GaO and AsO and elemental Ga and As are observed. This is probably due to decomposition of Ga2O3and As2O3because of argon ion bombardment.

ISSN:1071-1023    

DOI:10.1116/1.582658

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

Etch rate variability in a reactive sputter‐etching process can come from many factors, and here the etching of SiO2in CHF3is used in a study of the effects of various parameters on the etch rate, although other materials are also considered. It is found that this SiO2/CHF3combination is remarkably insensitive to chamber pump‐out time and the initial chamber condition, at least at high applied rf voltages (1.5 kV peak to peak). However, the gas pressure, flow rate, applied rf voltage, and the target electrode configuration do have a strong effect on rates. This latter result is shown to agree with presently available data on the capacitance of sputtering glow discharges. An etch rate reproducibility of ±2% over a period of four months has been demonstrated.

ISSN:1071-1023    

DOI:10.1116/1.582659

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

The adhesion characteristics of rf‐sputtered Cr/Cu and Ti/Cu films to polished silicon nitride substrates were studied. As‐deposited samples showed lower rupture strengths than Cr/Cu on unpolished alumina, but Ti samples that had been annealed above 500 °C and Cr films on substrates that had been prefired in air had higher rupture strengths than Cr/Al2O3. The compositions of the metal/substrate interfacial regions were studied by Auger depth profiling and by x‐ray photoelectron spectroscopy, and the results were correlated with the adhesion measurements. Chromium did not react extensively with the substrate during deposition, but it did react with the silicon oxynitride surface layer formed during prefiring. On the other hand, Ti reduced the silicon nitride during deposition to produce TiN and free Si. Above 500 °C the free silicon reacted with additional Ti at the Ti/TiN interface to form a silicide.

ISSN:1071-1023    

DOI:10.1116/1.582660

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.582661

出版商:American Vacuum Society    

年代:1983

数据来源: AIP