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Characterization of lateral thin-film-edge field emitter arrays |
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Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Volume 15,
Issue 2,
1997,
Page 535-538
B. R. Johnson,
A. I. Akinwande,
D. Murphy,
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摘要:
Measurements on arrays of lateral thin-film-edge field emitters are described, including current–voltage characteristics and results obtained with a high voltage (10 kV) cathodoluminescent phosphor screen. These devices offer the potential for enhanced emitter lifetime compared to conventional microtips, because one of the gate electrodes protects the emitter edge from ion sputter damage. One goal of this work is to demonstrate the feasibility of a cathodoluminescent field emitter lamp for a high-brightness backlight in an avionics display.
ISSN:1071-1023
DOI:10.1116/1.589288
出版商:American Vacuum Society
年代:1997
数据来源: AIP
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