摘要:

A trilevel lift‐off process using a soluble polyimide as the base layer is described. Al–Cu–Si metallizations are obtained with good pattern fidelity over 1 μm high structures with the use of substrate metallization temperatures of up to 325 °C. The process routinely produces metallizations 1 μm thick with linewidths less than 1.5 μm and pitch less than 2.5 μm.

ISSN:1071-1023    

DOI:10.1116/1.582632

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

A metal on polymer (MOP) mask technology is described which may be used for delineating ion implantation and proton bombardment regions. The MOP implant mask technique offers the high resolution patterning capabilities of metal liftoff yet may be removed in organic solvents. The high temperature polymer used showed no evidence of flow after an As implant dose of 1015cm−2at 150 kV. Several MOP lithographic schemes are suggested to meet a variety of implantation requirements. MOP implant masks may be of particular interest for compound semiconductors or electro‐optic materials where native oxides are not generally used for implant masking.

ISSN:1071-1023    

DOI:10.1116/1.582633

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

An ultrahigh vacuum‐compatible round wafer heater for silicon molecular beam epitaxy (MBE) is described. The assembly incorporates a hot tantalum filament and is capable of heating a single 2 in. diameter silicon wafer to a temperature of 1200 °C at a rate of 350 °C/min with a total power dissipation of 600 W. Best results are obtained when a silicon diffuser is positioned between the wafer and the filament. In this case, the observed temperature variation across the wafer is ≤16 °C, and virtually slip‐free epitaxial layers can be grown. The quality of epitaxial layers grown using this heater is, in general, the highest we have yet observed for silicon MBE material, with line dislocation density below 103/cm2.

ISSN:1071-1023    

DOI:10.1116/1.582634

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

摘要:

We have developed a remote, optical method for real‐time etch‐rate measurement and extremely precise end‐point detection during reactive‐ion etching of photoresist films. The photoresist solution is doped with a fluorescent dye before spin coating, and the fluorescence from the resulting film is observed to decrease in time as the material is removed by etching. In this manner, we make a rapid, single‐calibration etch‐rate measurement and have determined the etch endpoint with a precision, in film thickness, of ±30 Å.

ISSN:1071-1023    

DOI:10.1116/1.582635

出版商:American Vacuum Society    

年代:1983

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.582591

出版商:American Vacuum Society    

年代:1983

数据来源: AIP