摘要:

Transmission electron microscopy (TEM) was used to characterize image contrast obtained from doping-dependent etching ofp-njunctions in silicon. The local variations in crystal thickness give rise to the appearance of thickness fringes which may be interpreted as two-dimensional iso-concentration contours that map the dopant distribution. The samples used for the study consisted of solid source diffusions of boron into substrates of varying resistivities of bothn-andp-type. The factors which affect the interpretation of dopant profiles obtained from selective chemical etching of cross section TEM samples is addressed. One-dimensional chemical dopant concentration data were derived from secondary ion mass spectroscopy and one-dimensional carrier concentration data were derived from spreading resistance profiling.

ISSN:1071-1023    

DOI:10.1116/1.589832

出版商:American Vacuum Society    

年代:1998

数据来源: AIP

摘要:

Dopant concentration sensitive etching of silicon inHF:HNO3:CH3COOHsolution was studied using epitaxially grown silicon samples. The study has shown the unstable character of the process, significant time and structure size dependencies of the etching rate, as well as the dependence of the rate on the dopant concentration gradient. The data may be rationalized on the basis of the electrochemical and autocatalytic nature of the reaction. The influence of the dopant gradient and overall device geometry on the etching rate may cause significant inaccuracy of the dopant distribution measurements.

ISSN:1071-1023    

DOI:10.1116/1.589833

出版商:American Vacuum Society    

年代:1998

数据来源: AIP