摘要:

Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are used to investigate a cross‐sectional surface of Si(100) prepared by anexsitucleave HF‐dip technique. The agreement between the measured current–voltage spectra (I/Vs) and those calculated with an unpinned surface for bothn‐ andp‐type bulk surfaces is good, thus indicating that the prepared surface is unpinned and the model is valid. Both the experimental and calculated I/Vs show three components of current: tunneling out of valence‐band states (VB), tunneling through dopant states (D), and tunneling into conduction‐band states (CB). As demonstrated by experiment, in agreement with the model, the shape of the I/Vs allows the discrimination ofn‐type fromp‐type surfaces. Furthermore, the model indicates that by measuring the dopant state current D‐component STM/STS is sensitive to the carrier density within the range of 1018–1021cm−3. This suggests that thisexsitucleave sample preparation can be used to produce unpinned cross‐sectional surfaces for ultra‐shallow dopant profiles in Si(100). On such a surface STM/STS can be used to determine the carrier profile that results from the dopant profile.

ISSN:1071-1023    

DOI:10.1116/1.586384

出版商:American Vacuum Society    

年代:1992

数据来源: AIP

摘要:

Then+/pjunctions for 0.1‐μm‐gaten‐type metal–oxide semiconductor must be no deeper than about 30 nm in order to preserve long‐channel behavior in the enhancement mode metal–oxide semiconductor field‐effect transistor. We report junctions formed by implantation of antimony or arsenic of depth 16–64 nm. They have been characterized by secondary ion mass spectroscopy, Rutherford backscattering spectroscopy lattice location studies, transmission electron microscopy, and electrical measurements.

ISSN:1071-1023    

DOI:10.1116/1.586385

出版商:American Vacuum Society    

年代:1992

数据来源: AIP

摘要:

The aim of the present work is to investigate the outdiffusion of implanted boron from polycrystalline CoSi2overlayers into silicon. A detailed investigation is carried out on the secondary ion mass spectrometry (SIMS) quantification problems (matrix effects, interface roughness) applied to the determination of outdiffusion lengths and interface concentrations on mono and polycrystalline CoSi2overlayers. Comparative studies using spreading resistance profiling (SRP) are performed to assess the electrical performance of the outdiffused samples. The similarity in the behavior with polycrystalline silicon has led to the incorporation of outdiffusion from poly CoSi2into poly‐Si models.

ISSN:1071-1023    

DOI:10.1116/1.586386

出版商:American Vacuum Society    

年代:1992

数据来源: AIP

摘要:

Spreading resistance profiling (SRP) and secondary ion mass spectrometry (SIMS) were used to characterize ultra‐shallow (<100 nm deep) doping profiles. For junctions below 100 nm, the sheet resistances determined from carrier concentrations calculated from spreading resistance data in the traditional manner were considerably greater than values measured by the variable probe spacing technique. A new model which includes the effect of a damaged layer on the beveled surface is presented which accounts for the discrepancy between the measured and calculated sheet resistances. A Poisson analysis (SRP2) of the measured SRP data show that the doping profile and on‐bevel carrier concentration profile differ only slightly near the junction for the shallow, heavily doped layers considered in this study.

ISSN:1071-1023    

DOI:10.1116/1.586387

出版商:American Vacuum Society    

年代:1992

数据来源: AIP

摘要:

Reactive ion etching (RIE) is used as a method of pattern transfer and anisotropic etching for contact windows to shallow junctions in IC manufacture. We use photoluminescence (PL), junction current–voltage (I–V), transmission electron microscopy (TEM), and Rutherford backscattering (RBS) to characterize the defects introduced in silicon by the RIE process. A displacement damage region extends approximately 1000 Å with defect concentrations ≥1018cm−3, depending on the etching parameters. A defect reaction region continues from the displacement damage to depths greater than 1 μm. The extent of the defect diffusion is limited by trapping of interstitial silicon at impurity sites. We use anodic oxidation followed by HF acid etch to remove material in 250 Å steps, and then employ the combination of optical (PL), physical (RBS, TEM), and electrical (I–V) measurements to provide a complete defect profile of the near‐surface region.

ISSN:1071-1023    

DOI:10.1116/1.586389

出版商:American Vacuum Society    

年代:1992

数据来源: AIP

摘要:

The demarcation of Sb‐doped Si buried layer structures has been investigated following silicidation‐enhanced diffusion. After Co and Ti silicidation at 700 and 800 °C, respectively, two‐dimensional perspectives of the two buriedn/pjunction interfaces have been obtained by optical microscopy of bevel‐polished and etched (or stained) cross sections. Greatly enhanced and asymmetric diffusion of Sb buried layers is observed under silicided regions, as well as at large distances from the edges of silicided stripes. Excellent correlation of micrographs with one‐dimensional experimental secondary ion mass spectrometry profiles was obtained. Metrology and shallow junction processing/characterization issues are discussed.

ISSN:1071-1023    

DOI:10.1116/1.586390

出版商:American Vacuum Society    

年代:1992

数据来源: AIP