摘要:

We realize the first distributed feedback surface emitting laser diode with Al0.3Ga0.7As/GaAs multilayered heterostructure both by optical pumping and current injection. Sharp stimulated emission is observed at the selected wavelength determined by the optical cavity. Lateralp–njunction is formed by a selective Zn diffusion. The threshold current is 120 mA at 150 K with the active layer thickness of 6 μm and width of 3 μm. The temperature coefficient of the lasing wavelength is equal to a conventioal DFB laser diode. Anomalous mixing is found in the course of Zn diffusion and succeeding thermal treatment.

ISSN:1071-1023    

DOI:10.1116/1.583099

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

摘要:

The performance of any optoelectronic system and of infrared windows made from semiconductors is reduced by the large coefficient of reflection at each semiconductor‐free space surface, which has a typical value of about 30%. This paper reports the successful growth of multilayer antireflection coatings on GaAs using alternating layers of AlAs and GaAs. Bandwidths of 14% for a reflectivity of less than 13%, and 6% for a reflectivity of less than 7% were achieved, together with a minimum reflectivity of 1.3%. Model calculations suggest that these two structures can have reflectivities less than 10%, and 1% for these bandwidths under ideal conditions; the reasons for these discrepancies are explained. The results show that molecular beam epitaxy (MBE) has the potential for reproducible growth of antireflection coatings giving signal gains of 1.5 dB per surface at a given design wavelength.

ISSN:1071-1023    

DOI:10.1116/1.583100

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583101

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583102

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

摘要:

A three‐terminal GaAs switch is demonstrated which utilizes the previously reported regenerative switching mechanism shown in a combined planar‐doped barrier (PDB) andp‐njunction. This latter, two‐terminal switch relies on a mechanism by which holes injected into the PDB reduce the net charge in thepplane, and thus leads to a lowering of the barrier for electrons. The resultant increase in thermionic emission of electrons over the barrier in turn leads to more hole injection from thep‐njunction. As bias is increased, a point is reached where the internal gain exceeds unity, the PDB collapses, and the device switches to its ‘‘on’’ state. The addition of a third terminal to thenregion of thep‐njunction allows hole injection within the PDB region to be controlled independently of the total bias across the device. This, in turn, enables the switching threshold voltage to be varied over the full operating range of the device. The device is also demonstrated to function as a reversible, gate‐controlled switch. In many respects the characteristics of the switch resemble those of the metal‐insulation silicon switch (MIS), but in this case the device is made entirely within the bulk of the semiconductor by MBE and does not rely on a tunneling oxide. The small dimensions in the direction of carrier transport should lead to fast switching speeds, and preliminary measurements have shown a switching‐on transition time of 2 ns, and off times of around 10 ns. These times correspond closely to the measured capacitance and resistance of the device and should be capable of substantial improvement in a more optimized structure. The device has possible applications as a high‐speed logic element.

ISSN:1071-1023    

DOI:10.1116/1.583103

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583104

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583105

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583106

出版商:American Vacuum Society    

年代:1985

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.583107

出版商:American Vacuum Society    

年代:1985

数据来源: AIP