摘要:

The processing characteristics of a negative resist (CPMS) exposed with a x‐ray exposure system are studied by a comparison between developed profiles and calculated results of absorbed energy in the resist. In fine lines, reduction in volume is caused by vertical and horizontal shrinkage. In patterns which cover large areas, where the resist is fixed to the substrate by the adhesion between the resist and the substrate, the reduction in volume is mainly caused by the vertical shrinkage, while the horizontal shrinkage causes deformation of the profile at the pattern edge. This fact means that the normalized thickness for the large patterns agrees with the volume reduction ratio for the fine lines. These results are applied to a simulation program to estimate the profiles of the negative resist exposed with a x‐ray exposure system. The program is based on the sensitivity curve of the resist. The theoretical results calculated with the program agree well with the experimental results in the case where penumbral shadows due to mask to wafer gap exist.

ISSN:1071-1023    

DOI:10.1116/1.582813

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

The design and operation of a compact single‐grid, ultrahigh‐vacuum‐compatible, low‐energy ion gun capable of utilizing gaseous, liquid, or solid source material are described. The gun can provide>100 μA/cm2at ion energies ranging from 20 to 500 eV, and grid and filament lifetimes of several hundred hours have been obtained while operating with Zn and As. Current–voltage characteristics of the source as well as resulting ion beam profiles are reported. With appropriate grid design, uniform ion beam intensities were obtained over 4 cm diam wafers at a distance of 20 cm from a 1 cm diam ion source. In initial experiments using the ion source for accelerated‐ion doping of (100)Si and (100)GaAs, several orders of magnitude increases in elemental As and Zn incorporation probabilities were observed.

ISSN:1071-1023    

DOI:10.1116/1.582814

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

n‐In0.53Ga0.47As MIS capacitors with SiO2dielectric films have been investigated. The SiO2films, which were deposited by a novel low temperature process, exhibit stoichiometric composition. The MIS devices show a sharp interface and a minimum interface state density of 7×1011cm−2eV−1. The devices also show small hysteresis effects.

ISSN:1071-1023    

DOI:10.1116/1.582815

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

Two thermal, low pressure nitridation processes are achieved on silicon(111), using two different nitridant gases, and studiedinsituby x‐ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). The results show two different growth rates but the same evolution of the electronic and surface crystallographic stucture. A correlation is established between XPS and LEED measurements, associating the characteristic ‘‘quadruplet’’ patterns with the presence of intermediate nitrides. On the contrary, such compounds are absent when the LEED displays ‘‘8×8’’ patterns. Complementary results by reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM), permit us to conclude that our thickest films, up to 40 Å, are stoichiometric Si3N4, poorly crystallized in the β phase, presenting no surface rugosity.

ISSN:1071-1023    

DOI:10.1116/1.582816

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

Thick polysilicon (>1 mm) deposition on heated SiO2‐coated silicon substrates at high deposition rate (≥4 μm/min) at temperatures to 1100 °C was achieved by vacuum evaporation of silicon using two high power e guns. The deposition system was able to accommodate ten 75 mm diam substrates or eight 100 mm diam substrates. The system was designed as an alternative to the CVD process for depositing polysilicon material for dielectrically isolated integrated circuit substrates. This paper describes the system design and its capabilities.

ISSN:1071-1023    

DOI:10.1116/1.582817

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

Analysis of measured elastic low energy electron diffraction (ELEED) intensities from GaAs(110) reveals that the relaxations parallel to the surface associated with a ω1=29° bond‐length‐conserving rotated surface structure can be reduced by 75% without substantially affecting the quality of the model description of these intensities. Optimizing the surface geometry while constraining the atomic displacements parallel to the surface to be zero, however, leads to a significantly inferior description of these data. A model embodying greatly reduced but nonzero parallel displacements is compatible both with the ELEED intensities and with recent ion channeling data.

ISSN:1071-1023    

DOI:10.1116/1.582818

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.582819

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

The first application of high energy ion channeling for the structure determination of the atomically clean GaAs(110) surface is reported. It is found that the surface Ga and As atoms have small lateral displacements (≤0.1 Å) from ideal bulklike sites, whereas a normal component of the first layer shear vector as large as 0.7 Å is compatible with the experimental data. The implications of these results with respect to current LEED models are discussed.

ISSN:1071-1023    

DOI:10.1116/1.582820

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

摘要:

With a recently developed high resolution LEED instrument spot profiles of the 00–beam of Si/SiO2interfaces have been taken after the removal of the oxide. It is demonstrated, that beyond the half‐width the full profile down to a hundredth of peak intensity gives valuable information. The distribution of terraces up to more than 50 nm contribute essentially to a sharp central spike, which is only visible with a high resolution system. Whereas with usual LEED optics only terraces up to about 20 nm are evaluated from spot profile, the present data for the first time allow an evaluation in an extended range of terrace widths besides step atom density. Model calculations show the influence of instrument response and of details of the terrace width distribution on the spot profile.

ISSN:1071-1023    

DOI:10.1116/1.582821

出版商:American Vacuum Society    

年代:1984

数据来源: AIP

ISSN:1071-1023    

DOI:10.1116/1.582822

出版商:American Vacuum Society    

年代:1984

数据来源: AIP